High resolution shallow vertical Hall sensor operated with four-phase bi-current spinning current

Osberger, Laurent; Frick, V.; Hébrard, Luc

doi:10.1016/j.sna.2016.04.036

Cited by 15 publications

(7 citation statements)

References 13 publications

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“…Notably for the VHDs, since the two sensing contacts are located between the two biasing contacts, respectively, the part of the bias current will flow through the sensing contacts. As a consequence, the VHDs suffer from short-circuit effects because of the sensing contacts [10,[23][24], which decreases the geometrical factor and results in low sensitivity. The shortcircuit effect will become more marked for the LV standard CMOS technology with the limited n-well depth.…”

Section: Device Design and Tcad Simulationmentioning

confidence: 99%

Sensitivity Improvement of a Fully Symmetric Vertical Hall Device Fabricated in 0.18 μm Low-Voltage CMOS Technology

Huang

2021

IEEE J. Electron Devices Soc.

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This paper proposes a new implementation method to significantly improve the magnetic sensitivity of a fully symmetric vertical Hall device (FSVHD) based on low-voltage CMOS technology. The FSVHD consists of four identical threecontact vertical Hall elements (3CVHE) and each 3CVHE is located in a low-doped deep n-well. The terminals of the 3CVHE are n + implanted in an n-well and a p + implantation in a p-well is performed to act as a trench between two adjacent n + contacts, enabling Hall current flowing deeply for sensitivity improvement. The influence of the geometry sizes on magnetic sensitivity is exploited utilizing TCAD simulation to obtain the optimized device structure in a 0.18 μm CMOS standard technology. The experimental results reveal that the proposed FSVHD with a p + /pwell trench can attain an improved voltage-related sensitivity of 8.4 mV/VT, which is about 70% higher than that of a conventional FSVHD without a trench in the same CMOS fabrication process, while offset and noise are not degraded. The proposed p + /p-well implantation trench is a good solution to enhance the sensitivity of a low-voltage CMOS VHD with a low manufacturing cost.

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Section: Device Design and Tcad Simulationmentioning

confidence: 99%

Sensitivity Improvement of a Fully Symmetric Vertical Hall Device Fabricated in 0.18 μm Low-Voltage CMOS Technology

Huang

2021

IEEE J. Electron Devices Soc.

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“…In contrast, integrated three-dimensional magnetometers have been recently introduced on the market in thin sub-millimeter quadratic packages, such as wafer-level chip scale packages (WLCSPs) [14]. Besides, integrated magnetometers using three-dimensional Hall effect sensors are immune to mechanical stress thanks to the spinning current method [15]. This technique implemented with on-chip circuitry cancels the sensor offset due to mechanical stress applied on the silicon die.…”

Section: Introductionmentioning

confidence: 99%

Towards Tracking of Deep Brain Stimulation Electrodes Using an Integrated Magnetometer

Quirin

Féry

Vogel

et al. 2021

Sensors

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This paper presents a tracking system using magnetometers, possibly integrable in a deep brain stimulation (DBS) electrode. DBS is a treatment for movement disorders where the position of the implant is of prime importance. Positioning challenges during the surgery could be addressed thanks to a magnetic tracking. The system proposed in this paper, complementary to existing procedures, has been designed to bridge preoperative clinical imaging with DBS surgery, allowing the surgeon to increase his/her control on the implantation trajectory. Here the magnetic source required for tracking consists of three coils, and is experimentally mapped. This mapping has been performed with an in-house three-dimensional magnetic camera. The system demonstrates how magnetometers integrated directly at the tip of a DBS electrode, might improve treatment by monitoring the position during and after the surgery. The three-dimensional operation without line of sight has been demonstrated using a reference obtained with magnetic resonance imaging (MRI) of a simplified brain model. We observed experimentally a mean absolute error of 1.35 mm and an Euclidean error of 3.07 mm. Several areas of improvement to target errors below 1 mm are also discussed.

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“…This work designs a new three-contact vertical Hall device which derives from the five-contact vertical Hall device [ 22 , 23 ]. Three-contact vertical Hall devices have served as vertical Hall Magnetic Sensors, such as the four-folded three-contact structure.…”

Section: Introductionmentioning

confidence: 99%

A New Design of a Single-Device 3D Hall Sensor: Cross-Shaped 3D Hall Sensor

Tang

Lyu

Wang

et al. 2018

Sensors

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In this paper, a new single-device three-dimensional (3D) Hall sensor called a cross-shaped 3D Hall device is designed based on the five-contact vertical Hall device. Some of the device parameters are based on 0.18 μm BCDliteTM technology provided by GLOBALFOUNDRIES. Two-dimensional (2D) and 3D finite element models implemented in COMSOL are applied to understand the device behavior under a constant magnetic field. Besides this, the influence of the sensing contacts, active region’s depth, and P-type layers are taken into account by analyzing the distribution of the voltage along the top edge and the current density inside the devices. Due to the short-circuiting effect, the sensing contacts lead to degradation in sensitivities. The P-type layers and a deeper active region in turn are responsible for the improvement of sensitivities. To distinguish the P-type layer from the active region which plays the dominant role in reducing the short-circuiting effect, the current-related sensitivity of the top edge (Stop) is defined. It is found that the short-circuiting effect fades as the depth of the active region grows. Despite the P-type layers, the behavior changes a little. When the depth of the active region is 7 μm and the thickness of the P-type layers is 3 μm, the sensitivities in the x, y, and z directions can reach 91.70 V/AT, 92.36 V/AT, and 87.10 V/AT, respectively.

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High resolution shallow vertical Hall sensor operated with four-phase bi-current spinning current

Cited by 15 publications

References 13 publications

Sensitivity Improvement of a Fully Symmetric Vertical Hall Device Fabricated in 0.18 μm Low-Voltage CMOS Technology

Sensitivity Improvement of a Fully Symmetric Vertical Hall Device Fabricated in 0.18 μm Low-Voltage CMOS Technology

Towards Tracking of Deep Brain Stimulation Electrodes Using an Integrated Magnetometer

A New Design of a Single-Device 3D Hall Sensor: Cross-Shaped 3D Hall Sensor

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