Abstract:This paper proposes a new implementation method to significantly improve the magnetic sensitivity of a fully symmetric vertical Hall device (FSVHD) based on low-voltage CMOS technology. The FSVHD consists of four identical threecontact vertical Hall elements (3CVHE) and each 3CVHE is located in a low-doped deep n-well. The terminals of the 3CVHE are n + implanted in an n-well and a p + implantation in a p-well is performed to act as a trench between two adjacent n + contacts, enabling Hall current flowing deep… Show more
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