High-resolution retarding field analyzer

Abstract

Articles you may be interested inComparison between simulations and calibrations of a high resolution electrostatic analyzer Rev. Sci. Instrum. 72, 3662 (2001); 10.1063/1.1392337High-resolution submicron retarding field energy analyzer for low-temperature plasma analysis Appl. Phys. Lett. 75, 3923 (1999); 10.1063/1.125495Miniature, high-resolution, quadrupole mass-spectrometer array Rev.A simple to construct, high-resolution, retarding field analyzer ͑RFA͒ comprising a cone-in-the-can electrode configuration was developed to eliminate the problems associated with the planar RFA, specifically potential sagging around the discrete wires of the grid and the cutoff energy dependence on arrival angle. This study extends the analysis of this spectrometer by discussing its performance as a function of its internal dimensions, specifically the length to width (L/W) ratio of the analyzer body. Experimental data for several designs are also included and indicate a resolution of the order of 1% is achievable. The simple geometry of the analyzer lends itself to miniaturization. However, the elimination of the grid from the device is an essential task if full miniaturization of the analyzer is to be realized. Such a gridless high-resolution RFA has been developed and the first results from this device show a resolution comparable to that of the grid-based design. Performance analysis of the gridless analyzer as a function of its dimensions is also reported.

Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC

“…In this article, we present new insights on the capture and emission properties of electronic states at as-oxidized and nitrided interfaces using constant-capacitance deep level transient spectroscopy ͑CCDLTS͒ and double-CCDLTS measurements, methods that have been used effectively to study interface states in SiO 2 / Si MOS structures. 7,8 We show that the D it detected by CCDLTS in as-oxidized samples consists primarily of three overlapping distributions of interface states, distinguished by their different capture cross sections, that are passivated by NO annealing. The capture cross sections of the remaining interface states in nitrided samples are in the range 10 −21 −10 −19 cm 2 , much smaller than values reported for SiO 2 / Si interfaces.…”

“…Simultaneous high-low frequency capacitance-voltage ͑C − V͒ measurements at room temperature were performed to verify the reduction in interface state density, D it , near the conduction-band edge associated with NO annealing. [2][3][4] In addition, the MOS capacitors were characterized using C − V measurements at 1 MHz in the temperature range 300-80 K. CCDLTS and double-CCDLTS measurements, 7,8 were performed in the same temperature range using a SULA Technologies instrument. For CCDLTS measurements the voltage transient needed to maintain the constant value of the sample capacitance and thus a constant depletion width in the semiconductor is sampled at times t 1 and t 2 after the trap filling pulse.…”

“…For double-a͒ CCDLTS measurements of interface states a pair of filling pulses having the same duration but slightly different voltages define a narrow energy interval. 8 The CCDLTS signal is recorded for one of the filling pulses and a differential amplifier provides the difference of the CCDLTS signals for the two filling pulses, the double-CCDLTS signal. The temperature of the double-CCDLTS peak from interface states is expected to shift as the energy window, and therefore the energy position of the sampled traps, changes.…”

“…The temperature of the double-CCDLTS peak from interface states is expected to shift as the energy window, and therefore the energy position of the sampled traps, changes. 8 In contrast, single CCDLTS scans do not provide information on the spatial location of the traps.…”

Interface traps in 28 nm node field effect transistors detected by capacitance transient spectroscopy

“…Deep level transient spectroscopy (DLTS), primarily developed for characterization of localized, point‐like carrier traps in semiconductors , was soon successfully utilized for the detection and characterization of traps located at the interfaces between the semiconductor and insulator in metal/isolator/semiconductor (MIS) structures . For the correct characterisation of the trap properties and their distribution, variations of the standard DLTS measurement sequence were applied (see e.g., and references therein). In the case of interface trap characterization, it seems appropriate using a more general appellation for the technique, namely Capacitance Transient Spectroscopy (CTS) instead of DLTS.…”