High-Resolution Photoluminescence and Reflectance Spectra of Homoepitaxial GaN Layers

Kornitzer, K.; Ebner, Tamara; Grehl, M; Thonke, Klaus; Sauer, R.; Kirchner, C.; Schwegler, V.; Kamp, M.; Leszczyński, M.; Grzegory, I.; Porowski, S.

doi:10.1002/(sici)1521-3951(199911)216:1<5::aid-pssb5>3.0.co;2-f

Cited by 51 publications

(37 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…5). We compare this spectra with the data [9,10] of the most perfect GaN sample reported so far which is an epilayer grown on a CAIBE pre-treated single crystal [11]. The most intensive transition is located at 3.485 eV and is assigned to the neutral donor bound exciton.…”

Section: Resultssupporting

confidence: 92%

An Oxygen Doped Nucleation Layer for the Growth of High Optical Quality GaN on Sapphire

Kuhn¹,

Scholz²

2001

phys. stat. sol. (a)

View full text Add to dashboard Cite

We present a new oxygen-doped AlN nucleation layer for the growth of high quality GaN on sapphire by metalorganic vapor phase epitaxy. We investigated in detail the influence of oxygen in the gas phase in a range from 0.5 to 10 ppm. Around 4 ppm we obtained very stable and reproducible process conditions. A further optimization of the nucleation thickness resulted in GaN layers showing smooth and featureless surfaces with excellent spectroscopic properties. The best values were 45 arcsec in XRD rocking curve of the (002) peak and 1.7 meV in low temperature photoluminescence (PL) of the donor bound exciton. No yellow luminescence even at room temperature could be detected. Because of the low FWHM in PL a lot of features near the bandgap of GaN could be resolved. We observed the donor and acceptor bound exciton as well as the free A, B and C exciton.

show abstract

Section: Resultssupporting

confidence: 92%

An Oxygen Doped Nucleation Layer for the Growth of High Optical Quality GaN on Sapphire

Kuhn¹,

Scholz²

2001

phys. stat. sol. (a)

View full text Add to dashboard Cite

show abstract

“…MOCVD and MBE growth has also been performed on these bulk substrates. The group at University of Ulm in collaboration with Unipress demonstrated epitaxial films, which exhibited the narrowest reported photoluminescence line widths at low temperature (O.lmeV) (Kornitzer, et al 1999). The UNIPRESS group is also working high power HEMTs, Schottky diodes, and UV detectors.…”

Section: Gan Device Research In Europementioning

confidence: 57%

“…Very high quality homoepiatxial growth of GaN by MOCVD was obtained on top of these substrates and the films exhibited narrow doubleCrystal x-ray diffraction (DCXRD) linewidths a s low as 21 arcsec. The group at University of Ulm in collaboration with Unipress has obtained thin films which exhibit the narrowest reported PL linewidths at low temperature (O.lmeV) which is indicative of the uniform high quality film (Kornitzer, et al 1999). MBE has also been performed on the bulk crystals.…”

Section: Gan Bulk Crystal Growthmentioning

confidence: 91%

High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

View full text Add to dashboard Cite

Support is provided by a variety of U.S. government agencies, including ONR, DoC, and NSF.ITRI's mission is two-pronged: (1) to inform U.S. policymakers, strategic planners, and managers of the state of selected technologies in foreign countries in comparison to the United States; and (2) to identify opportunities for international cooperation among countries and collaboration among researchers. ITRI assessments cover basic research, advanced development, and applications. Panels of typically six technical experts conduct these assessments. Panelists are leading authorities in their fields, technically active, and knowledgeable about U.S. and foreign research programs. As part of the assessment process, panels visit and carry out extensive discussions with foreign scientists and engineers in their labs.The ITRI staff at Loyola College helps select topics, recruits expert panelists, arranges study visits to foreign laboratories, organizes workshop presentations, and finally, edits and disseminates the final reports. HIGH-TEMPERATURE ELECTRONICS IN EUROPE August 2000Vladimir Dmitriev (Chair) T. Paul Chow Steven P. DenBaars Michael S. Shur Michael G. Spencer George White This document was sponsored by the Office of Naval Research (ONR) and the National Science Foundation (NSF) under ONR Grant NOOO14-99-1-0529 and NSF Cooperative Agreement ENG-9707092, both awarded to the International Technology Research Institute at Loyola College in Maryland. The government has certain rights in this material. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States government, the authors' parent institutions, or Loyola College. ABSTRACTThis final report of ITRI's panel on high-temperature electronics in Europe consists of an executive summary, an introductory chapter, and six chapters by panel members on various aspects of wide bandgap electronics. The report also contains site reports for the various companies, labs, universities, and government offices that the panel visited in Europe. Comparisons are made between developments in Europe and the United States. Principal findings include: • European scientists and engineers see optoelectronics and high-power, high-frequency electronics as the major application opportunities for wide bandgap semiconductors.• The size of the GaN and SiC technology and device development effort in Europe is comparable with that in the United Statews.• Europe is ahead of the U.S. in in bulk GaN growth technology.• The United States is currently ahead in GaN-based device developments for light emitters, and high-power/high-frequency applications.• In silicon carbide technology, the U.S. is ahead in SiC bulk crystal and epitaxial production.• In R&D silicon carbide effort, European organization both academic and industrial have recently demonstrated outstanding results in both material growth (bulk and epi) and device development proving the leading position in the world; in the area ...

show abstract

“…Ультрафіолетові фоточутливі структури на основі цих сполук в основному отримують, використовуючи високопрецизійні та дорогі методи, такі як молекулярно-проме-нева епітаксія та металоорганічний синтез [2]. Однак обмежений доступ до подібних техноло-гій, а також відносно висока температура росту плівок при використанні цих методів приво-дять до утворення значних концентрацій влас-них дефектів кристалічної гратки і, як наслідок, до високої темнової провідності [3], що спону-кає до розробки альтернативних низькотемпе-ратурних, відносно недорогих методів форму-вання структур на основі ІІІ-нітридів.…”

Section: вступunclassified

TECHNOLOGICAL ASPECTS OF ULTRAVIOLET RADIATION SENSORS FORMATION ON THE BASE OF HETEROSTRUCTURE GaSe-GaN

Stakhira¹,

Shandra²,

Cherpak³

2014

SEMST

View full text Add to dashboard Cite

High-Resolution Photoluminescence and Reflectance Spectra of Homoepitaxial GaN Layers

Cited by 51 publications

References 3 publications

An Oxygen Doped Nucleation Layer for the Growth of High Optical Quality GaN on Sapphire

An Oxygen Doped Nucleation Layer for the Growth of High Optical Quality GaN on Sapphire

High-Temperature Electronics in Europe

TECHNOLOGICAL ASPECTS OF ULTRAVIOLET RADIATION SENSORS FORMATION ON THE BASE OF HETEROSTRUCTURE GaSe-GaN

Contact Info

Product

Resources

About