High-resolution EUV imaging tools for resist exposure and aerial image monitoring

Booth, Martin J.; Brisco, O.; Brunton, Adam N.; Cashmore, Julian S.; Elbourn, P.; Elliner, G.; Gower, Malcolm C.; Greuters, J.; Grunewald, P.; Mora-Gutiérrez, Roman Anselmo; Hill, Theodore P.; Hirsch, Joy; Kling, Lasse; McEntee, N.; Mundair, S.; Richards, P. G.; Truffert, Vincent; Wallhead, Ian; Whitfield, Michael D.; Hudyma, Russell M.

doi:10.1117/12.606715

Cited by 38 publications

(8 citation statements)

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“…The hole plate was installed approximately 45 mm from the CCD, and it was manufactured with 50 µm squared holes rotated 22.5˝and a grid pitch size of 150 µm [15]. The invacuum water-cooled back-illuminated EUV CCD was sized 28ˆ28 mm 2 . This allowed for placing the sensor near the microscope in the same vacuum chamber.…”

Section: High-numerical-aperture Wavefront Sensormentioning

confidence: 99%

Wavefront Sensing for Evaluation of Extreme Ultraviolet Microscopy

Ruiz-Lopez

Mehrjoo

Keitel

et al. 2020

Sensors

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Wavefront analysis is a fast and reliable technique for the alignment and characterization of optics in the visible, but also in the extreme ultraviolet (EUV) and X-ray regions. However, the technique poses a number of challenges when used for optical systems with numerical apertures (NA) > 0.1. A high-numerical-aperture Hartmann wavefront sensor was employed at the free electron laser FLASH for the characterization of a Schwarzschild objective. These are widely used in EUV to achieve very small foci, particularly for photolithography. For this purpose, Schwarzschild objectives require highly precise alignment. The phase measurements acquired with the wavefront sensor were analyzed employing two different methods, namely, the classical calculation of centroid positions and Fourier demodulation. Results from both approaches agree in terms of wavefront maps with negligible degree of discrepancy.

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Section: High-numerical-aperture Wavefront Sensormentioning

confidence: 99%

Wavefront Sensing for Evaluation of Extreme Ultraviolet Microscopy

Ruiz-Lopez

Mehrjoo

Keitel

et al. 2020

Sensors

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“…Four systems are now available. [48][49][50] This system has a 2-aspherical-mirror system with a numerical aperture of 0.3, and a demagnification of 1/5. The exposure area is 100 µm× 200 µm.…”

Section: Exposure Tools and Experimentsmentioning

confidence: 99%

Euv Lithography for Semiconductor Manufacturing and Nanofabrication

Kinoshita

2007

COSMOS

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EUV lithography is the exposure technology in which even 15 nm node which is the limit of Si device can be achieved. Unlike the conventional optical lithography, this technology serves as a reflection type optical system, and a multilayer coated mirror is used. Development of manufacturing equipment is accelerated to aim at the utilization starting from 2011. The critical issues of development are the EUV light source which has the power over 115 W and resist with high sensitivity and low line edge roughness (LER).

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“…Applying these developments and resolution capabilities of optical microscopy towards the inspection of defects on EUVL mask blanks has thus far been mainly pursued using 13.5 nm wavelength synchrotron-based imaging systems [12][13][14][15][16]. To make this emerging technique more widely available, one needs to employ more compact and less expensive illumination sources.…”

Section: Introductionmentioning

confidence: 99%

EUV imaging with a 13nm tabletop laser reaches sub-38nm spatial resolution

et al. 2006

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We have acquired images with sub-38 nm spatial resolution using a tabletop extreme ultraviolet (EUV) imaging system operating at a wavelength of 13.2 nm, which is within the bandwidth of Mo/Si lithography mirrors This zone platebased, full-field microscope has the power to render images in only several seconds with up to a 10,000 µm 2 field of view. The ability to acquire such high-resolution images using a compact EUV plasma laser source opens many possibilities for nanotechnology, including in-house actinic inspection of EUV lithography mask blanks.

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High-resolution EUV imaging tools for resist exposure and aerial image monitoring

Cited by 38 publications

References 1 publication

Wavefront Sensing for Evaluation of Extreme Ultraviolet Microscopy

Wavefront Sensing for Evaluation of Extreme Ultraviolet Microscopy

Euv Lithography for Semiconductor Manufacturing and Nanofabrication

EUV imaging with a 13nm tabletop laser reaches sub-38nm spatial resolution

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