High-resolution core-level photoelectron spectroscopy of Mg/Si() surfaces

Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering

“…The great thermal stability of these Co and Fe films should be compared with the thermal behaviour of Co and Fe films on pure Si (100) substrates. In the latter case strong in-diffusion of the metals and outdiffusion of Si is observed which leads to pronounced silicide formation (see Section 2 and [44,45]). Nothing like this is observed in the present case which means that the barrier is stable against diffusion and does not show pin holes to a larger amount.…”

“…In the sample preparation, precautions were taken to avoid the above mentioned effects by a particular growth procedure. First 0.5 ML of Mg was evaporated on cleaned Si (100) which is expected to occupy the cave sites (see Figure 1) on the Si (100) surface without any silicide formation [42][43][44] and then oxygen was streamed into the chamber. In this way both, silicide formation and also the oxidation of Si could be avoided.…”

The reaction of Si(001) with magnesium and calcium

“…The amphoteric silicon surface may act as an electron acceceptor [5][6][7][8] or donor 9 in chemisorption, but organic molecule in the case of Alq 3 on Si is physisorbed, 2 i.e., without bond formation or charge flow across the interface. 11,12 The initial interaction of Mg with the Si(001) 2 Â 1 surface, which has been studied in detail, 13,14 shows that the Mg initially enters the so-called cave site that is opened up by the dimerization. 10 Nevertheless, severe reconstruction, altering a dimer row into a single row, has been reported in some cases.…”