The reaction of Si(001) with magnesium and calcium

Wertheim, G. K.

doi:10.1063/1.3549256

Cited by 15 publications

(8 citation statements)

References 25 publications

(12 reference statements)

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“…[31][32][33] For example, when Mg and Ca are adsorbed on Si(001) to form MgSi 2 and CaSi 2 , the Si 2p core-level shifts observed as a function of Ca and Mg coverage indicate charge transfer from alkaline-earth metals to Si(001). 33 Using density functional theory (DFT), we recently proposed that at sub-monolayer coverage, Sr on Si (001) results in un-tilting of the dimers due to Zintl charge transfer from the electropositive metal to Si. 34 This structural change is an essential factor in creating the template for the subsequent SrTiO 3 growth.…”

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confidence: 98%

Charge transfer in Sr Zintl template on Si(001)

Choi

Posadas

Seo

et al. 2013

Applied Physics Letters

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The formation of the half monolayer (ML) Sr Zintl template layer on Si(001) is investigated in a combined experimental and theoretical work consisting of in situ reflection high energy electron diffraction, in situ x-ray photoelectron spectroscopy (XPS), and density functional theory. Starting with clean 2 × 1 reconstructed Si(001), we demonstrate that Sr deposition leads to a charge transfer from the metal to the Si substrate resulting in the disappearance of the asymmetry of Si dimers—an essential structural change that enables direct perovskite epitaxy on Si, and likely, other semiconductors. XPS reveals an unexpected shift to higher binding energy of the Si 2p core-level components, including the bulk. This unusual behavior is attributed to final state effects using first principles calculations. As measured by ultraviolet photoelectron spectroscopy, the deposition of 0.5 ML of Sr lowers the work function of the system by 1.35 eV, and is in good agreement with our theoretical calculations.

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confidence: 98%

Charge transfer in Sr Zintl template on Si(001)

Choi

Posadas

Seo

et al. 2013

Applied Physics Letters

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“…19) Acid pre-treatments followed by annealing in an ultra-high vacuum (UHV) chamber are beneficial for establishing longrange 2 × 1 surface order on Si(001) without residual native oxides. 20,21) However, the acid processes affect Ge(001) and (In)GaAs because the intrinsic surface morphologies are lost. The former has single Ge atoms that linger on the surface, 22) whereas the latter shows no clear long-range surface ordering.…”

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confidence: 99%

Surface electronic structure of Si_1−xGe _x (001)-2 × 1: a synchrotron radiation photoemission study

Cheng¹,

Wan²,

Cheng³

et al. 2020

Appl. Phys. Express

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By using synchrotron radiation photoemission, this study investigates the room-temperature surface electronic structure of Si1−xGex(001)-2 × 1 grown by molecular-beam epitaxy on an epi Ge(001) substrate. The electronic structure of the Ge content, which ranges from 10% to 90%, shows similar surface behaviors. The Ge 3d core-level spectra of Si1−xGex(001)-2 × 1 are essentially the same as that of epi Ge(001)-2 × 1, terminating with tilted Ge–Ge dimers and Ge atoms in the subsurface layer. The strain effect is manifest only for the Si atoms, for which three types are revealed, namely two near the surface region and one in the bulk.

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“…The S2 component arises from the second surface layer. 10,22) The small SCLS value suggests that the Ge atoms in the S2 layer behave similarly to those in the bulk.…”

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Surface electronic structure of epi germanium (001)-2 × 1

Cheng

Lin

Chen

et al. 2017

Appl. Phys. Express

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Photoemission from an epi Ge(001)-2 × 1 surface is presented using synchrotron radiation as a probe. The topmost surface atoms are buckled with the up-dimer and down-dimer atoms exhibiting surface core-level shifts (SCLSs) of −0.492 and −0.178 eV, respectively. The subsurface layer shows a +0.083 eV SCLS. The final-state effect suffices to explain the sign of the shift. The electron affinity and ionization potential for the epi Ge surface are 4.36 and 5.09 eV, respectively. An argument contrasting the current results with those of existing reports with non-epi surfaces is also given. Non-epi surfaces possess Ge surfaces with isolated single atoms or small droplets that affect Ge’s contact with dielectric layers and the electric performances of the Ge metal–oxide–semiconductor structure.

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The reaction of Si(001) with magnesium and calcium

Cited by 15 publications

References 25 publications

Charge transfer in Sr Zintl template on Si(001)

Charge transfer in Sr Zintl template on Si(001)

Surface electronic structure of Si_1−xGe _x (001)-2 × 1: a synchrotron radiation photoemission study

Surface electronic structure of epi germanium (001)-2 × 1

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The reaction of Si(001) with magnesium and calcium

Cited by 15 publications

References 25 publications

Charge transfer in Sr Zintl template on Si(001)

Charge transfer in Sr Zintl template on Si(001)

Surface electronic structure of Si1−x Ge x (001)-2 × 1: a synchrotron radiation photoemission study

Surface electronic structure of epi germanium (001)-2 × 1

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Product

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Surface electronic structure of Si_1−xGe _x (001)-2 × 1: a synchrotron radiation photoemission study