1995
DOI: 10.1016/0040-6090(95)06537-7
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High-resolution Auger depth profiling of multilayer structures Mo/Si, Mo/B4C, Ni/C

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Cited by 16 publications
(7 citation statements)
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“…In sputtering multilayer structures Mo/Si, Mo/B 4 C and Ni/C by Ar + it was found [35] that Auger depth profiles remained partly distorted even at 600 eV impact ion energy, since in that energy range not only linear isotropic cascades but also primary recoils (knock-on atoms) start to contribute to sputtering events. The authors [35] proposed that the lighter atoms (Si, C) are sputtered more efficiently due to reflecting scattering on the heavy atoms (Mo, Ni) of the underlying layer.…”
Section: Atomic Mixingmentioning
confidence: 97%
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“…In sputtering multilayer structures Mo/Si, Mo/B 4 C and Ni/C by Ar + it was found [35] that Auger depth profiles remained partly distorted even at 600 eV impact ion energy, since in that energy range not only linear isotropic cascades but also primary recoils (knock-on atoms) start to contribute to sputtering events. The authors [35] proposed that the lighter atoms (Si, C) are sputtered more efficiently due to reflecting scattering on the heavy atoms (Mo, Ni) of the underlying layer.…”
Section: Atomic Mixingmentioning
confidence: 97%
“…[34]) is a fundamental process accompanying any sputter depth profiling experiments. For multilayers, it results in the broadening of interfaces, degradation of profiles (decrease of the modulation factors) and asymmetry of the peak shape depending on the ballistic parameters (mass of sputtered atoms and bombarding ions, impact energy), thermodynamic features of layer materials, and the sequence of layers [22,[35][36][37]. Generally, minimizing the ballistic mixing is achieved by lowering the energy of bombarding ions; it decreases penetration (mixing) depth and extent of collision cascades.…”
Section: Atomic Mixingmentioning
confidence: 97%
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“…La/B 4 C multilayers possess highest R 0~7 0% for near-normal incidence of radiation Thin Solid Films 577 (2015) [11][12][13][14][15][16] in the wavelength range of 6.7-8.5 nm. However, a strong chemical interaction between La and B provokes the formation of boron-lanthanum compounds in interface regions.…”
Section: Introductionmentioning
confidence: 99%
“…A number of diagnostic techniques have been developed at the institute. These include reflectometry in the hard and soft X-ray ranges, probe and electron microscopies [20], layer-by-layer Auger-spectroscopy [21], and atomic force microscopy [14], which, when used jointly, allow a fairly accurate characterization of MLS.…”
Section: Sputtering Of Multilayer Structures and Study Of Their Charamentioning
confidence: 99%