High-resistivity GaN buffer templates and their optimization for GaN-based HFETs

Hubbard, Seth M.; Zhao, Guangyuan; Pavlidis, D.; Sutton, W.; Cho, E.

doi:10.1016/j.jcrysgro.2005.06.022

Cited by 56 publications

(37 citation statements)

References 21 publications

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“…According to the theoretical calculation of strain relaxation in 1µm GaN epilayer (with 100 nm AlN buffer layer) on sapphire [16] is about 1GPa which is close to that of design B. The relaxation occurs more quickly in epilayers grown by MOCVD than by MBE, more gradual relaxation is expected above 20 nm and this would lead to less deformation of the GaN membrane; this is to be confirmed experimentally in the future with our in-house MOCVD [17]. Deformation of consequent GaN membranes was 25 % less than that of the 1 st GaN membrane based on the layer by layer analysis [18].…”

Section: Designs and Resultssupporting

confidence: 77%

GaN/air gap based micro‐opto‐electro‐mechanical (MOEM) Fabry‐Pérot filters

Cho

Pavlidis

Sillero

2007

Phys. Status Solidi (c)

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Structural and optical properties of Fabry-Pérot filters (FPFs) with GaN/air gap based distributed Bragg reflectors (DBRs) were studied. Reflectance of GaN/air gap DBRs on sapphire substrate was calculated from the standard transmission matrix method and results showed that 98% reflectance is achievable with only 3.5 pairs at a center wavelength of 450 nm. The thickness of the GaN layer and the first AlN layer was determined according to the deformation induced by the residual stress. In-plane strain corresponding to growth conditions and the thickness of the GaN epilayer was considered for this analysis. Optical tuning efficiency and spectral range were found to be 0.27 and 25 nm respectively for FPFs with GaN/air gap (322 nm/113 nm) based DBRs and a λ 0 /2 air resonant cavity. The calculated pull-in voltage was 1.5 V. Crack free AlN grown on GaN by in-house MOCVD showed an etching rate of 0.2 nm/min.

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Section: Designs and Resultssupporting

confidence: 77%

GaN/air gap based micro‐opto‐electro‐mechanical (MOEM) Fabry‐Pérot filters

Cho

Pavlidis

Sillero

2007

Phys. Status Solidi (c)

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“…Since SI GaN substrates are expensive, an epitaxial layer of an SI buffer layer on a relatively cheap sapphire substrate is normally used. 1 A straightforward way of achieving semiinsulation is to compensate the residual donors by deep acceptors. Fe acts as a deep acceptor in GaN, 2,3 and it has been employed to dope buffer layers in AlGaN/GaN HEMT structures.…”

Section: Introductionmentioning

confidence: 99%

Electron and Hole Capture Cross-Sections of Fe Acceptors in GaN:Fe Epitaxially Grown on Sapphire

Aggerstam

Pinos

Marcinkevičius

et al. 2007

Journal of Elec Materi

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“…The epitaxy structure of HEMT is in principle rather simple, which consists of a thin AlGaN layer on top of a GaN baselayer. To enable a complete channel pinch-off, low loss at high frequencies, and proper drain-source current saturation, the achievement of the semi-insulating GaN (SI-GaN) template is critically important for this kind of device [3]. It is well known that normally undoped GaN grown on sapphire by metalorganic chemical vapor deposition (MOCVD) typically exhibits n-type conductivity.…”

Section: Introductionmentioning

confidence: 99%

A study of semi-insulating GaN grown on AlN buffer/sapphire substrate by metalorganic chemical vapor deposition

Öztürk

Özçelik

et al. 2006

Journal of Crystal Growth

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We report the remarkably improved crystal quality of semi-insulating GaN grown by metalorganic chemical vapor deposition on an AlN buffer layer, which is deposited on sapphire substrate. The electrical and structural properties are characterized by dark current-voltage transmission line model and X-ray diffraction measurements. It is found that the crystal quality of the GaN epilayer is strongly related with the growth temperature of the decreased-temperature GaN interlayer. In comparison with the normal GaN grown on sapphire, the crystal quality is remarkably improved along with a semi-insulating electrical character. The high-mobility field effect transistors device based on the semi-insulating GaN shows good pinch off properties. Our electrical measurement results of GaN grown directly on an AlN buffer indicated that the as-grown-undoped GaN is naturally semi-insulating material. The origination of the residual donors in normal GaN grown on sapphire substrate is also discussed. © 2006 Elsevier B.V. All rights reserved

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High-resistivity GaN buffer templates and their optimization for GaN-based HFETs

Cited by 56 publications

References 21 publications

GaN/air gap based micro‐opto‐electro‐mechanical (MOEM) Fabry‐Pérot filters

GaN/air gap based micro‐opto‐electro‐mechanical (MOEM) Fabry‐Pérot filters

Electron and Hole Capture Cross-Sections of Fe Acceptors in GaN:Fe Epitaxially Grown on Sapphire

A study of semi-insulating GaN grown on AlN buffer/sapphire substrate by metalorganic chemical vapor deposition

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