GaN/air gap based micro‐opto‐electro‐mechanical (MOEM) Fabry‐Pérot filters

Cho, E.; Pavlidis, D.; Sillero, E.

doi:10.1002/pssc.200674730

Cited by 5 publications

(3 citation statements)

References 17 publications

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“…AlN/GaN short period-superlattice ͑SPS͒ structures are employed in distributed Bragg reflectors ͑DBRs͒ which are considered to be a key element in nitride optoelectronic devices such as vertical cavity surface emitting lasers, resonant cavity surface emitting diodes resonant cavity and tunable detectors. 6 This type of an AlN/GaN superlattice also serves as an interlayer in order to compensate for the strain arising between two lattice mismatched layers such as in the case of GaN deposited directly on sapphire or silicon.…”

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confidence: 99%

Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy

Stolz

Cho

Dogheche

et al. 2011

Applied Physics Letters

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International audienceThe waveguideproperties are reported for wide bandgap gallium nitride(GaN) structures grown by metal organic vapor phase epitaxy on sapphire using a AlN/GaN short period-superlattice (SPS) buffer layer system. A detailed optical characterization of GaN structures has been performed using the prism coupling technique in order to evaluate its properties and, in particular, the refractive index dispersion and the propagation loss. In order to identify the structural defects in the samples, we performed transmission electron microscopy analysis. The results suggest that AlN/GaN SPS plays a role in acting as a barrier to the propagation of threading dislocations in the active GaN epilayer; above this defective region, the dislocations density is remarkably reduced. The waveguide losses were reduced to a value around 0.65dB/cm at 1.55μm, corresponding to the best value reported so far for a GaN-based waveguide

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confidence: 99%

Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy

Stolz

Cho

Dogheche

et al. 2011

Applied Physics Letters

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“…A study is being conducted on the single-mode micro waveguide of the Silicon microstructure core, Sapphire layer is cladding to optimize waveguide features and optical refractive indices [TE0, TM0 polarization]. It appears that the effective index plays a significant role in providing waveguide along with the slab, according to the analyzed waveguide modes are confined within the higher index of refraction of the Silicon middle layer, which is illustrated in Figure 4a in 2D [8,9]. Also, Figure 4b indicates how the mode distributes over (Silicon on sapphire) in 2D, and which depicted how the energy of modes accumulated in high refractive index, this is very useful for the optical fiber.…”

Section: Resultsmentioning

confidence: 99%

Modal Analysis for Single-Mode Waveguides of Silicon on Sapphire (SOS) at Infrared Region Using Finite Element Method (FEM)

Shwan¹

2022

JASN

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One of the recommended platforms for waveguide generation in the infrared region is silicon-on-sapphire (SOS). This paper proposes a modal of the optical waveguide of silicon on a sapphire from λ = 2 − 5 𝜇𝑚, using FEM (finite-element method) solver simulation performed by FDTD [finite-different-time-domain]. The waveguide is directly based on the refractive index difference between the wave's guideline regions and surrounding media (cladding). The use of FEM to analyze a single waveguide mode of SOS at a certain size within multiple wavelengths is a unique aspect of this research. In addition, this project's objective is to discover how the waveguide size (dimension) impacts single-mode waveguides in the infrared region. The investigation includes single-mode polarization with both transverse-magnetic TM0 and transverse-electric TE0 polarization. The waveguide is reliant on the effective index of different mediums, and sizes of substances, they have a significant role in generating waveguide with minimum loss (minimum dispersion). The study's most crucial finding is that singlemode can be achieved in silicon with widths ranging from 0.4 − 4.5 𝜇𝑚 and height ranging from 0.4 − 0.7 𝜇𝑚 as well as analysis the characteristics of mode polarization and explain those parameters have a massive role in the waveguide like effective index, sizes of structure and wavelength. In keeping with our modal analysis, we also state the mode's characterization and direct some factors' influence on the waveguide.

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“…However, these depend on a refractive index difference of only 0.2 or less between adjacent layers, compared to the difference of ∼1.4 in GaN-air structures. Cho et al reported simulated reflectance spectra for the latter type of structure, showing that peak reflectivities at 450 nm reach essentially 100% with as few as 4 repeat periods [10].…”

Section: Introductionmentioning

confidence: 99%

High-reflectivity GaN/air vertical distributed Bragg reflectors fabricated by wet etching of sacrificial AlInN layers

Xiong¹,

Edwards²,

Christmann³

et al. 2010

Semicond. Sci. Technol.

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Microstructures containing GaN/air distributed Bragg reflector (DBR) regions were fabricated by a selective wet etch to remove sacrificial AlInN layers from GaN-AlInN multilayers. The epitaxial multilayers were grown on free-standing GaN substrates, and contained AlInN essentially lattice matched with GaN in order to minimize strain. Two geometries were defined for study by standard lithographic techniques and dry etching: cylindrical pillars and doubly anchored rectangular bridges. Microreflectivity spectra were recorded from the air-gap DBRs, and indicated peak reflectivities exceeding 70% for a typical 3-period microbridge. These values are likely to be limited by the small scale of the features in comparison with the measurement spot. The stopband in this case was centred at 409 nm, and the reflectivity exceeded 90% of the maximum over 73 nm. Simulations of reflectance spectra, including iterations to layer thicknesses, gave insight into the tolerances achievable in processing, in particular indicating bounds on the parasitic removal of GaN layers during wet etching. Air-gap nitride DBRs as described can be further developed in various ways, including adaptation for electrostatic tuning, incorporation into microcavities, and integration with active emitters.

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GaN/air gap based micro‐opto‐electro‐mechanical (MOEM) Fabry‐Pérot filters

Cited by 5 publications

References 17 publications

Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy

Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy

Modal Analysis for Single-Mode Waveguides of Silicon on Sapphire (SOS) at Infrared Region Using Finite Element Method (FEM)

High-reflectivity GaN/air vertical distributed Bragg reflectors fabricated by wet etching of sacrificial AlInN layers

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