High-quality spin-on glass-based oxide as a matrix for embedding HfO2 nanoparticles for metal-oxide-semiconductor capacitors

Molina, Joel; Muñoz, Ana; Calleja, W.; Rosales, Pedro; Torres, Alfonso

doi:10.1007/s10853-011-6036-0

Cited by 15 publications

(14 citation statements)

References 4 publications

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“…It can play a role in the continuous down-scaling of integrated circuits since new insulating materials with a high dielectric constant are being researched to replace SiO2 as a gate dielectric (Wilk et al 2001;Dahal and Chikan 2012;Molina et al 2012a;Molina et al 2012b;Rinkio et al 2009). HfO2 thin layers are highly promising as high-κ dielectric layers in CMOS technology and as dielectric capacitor layers in DRAMs (Wilk et al 2001).…”

Section: Introductionmentioning

confidence: 99%

“…Amorphous nanoparticles of HfO2 were used for EUV patterning to develop inorganic photoresists (Trikeriotis et al 2012). Hafnia nanoparticles were embedded in a glass matrix to increase the dielectric constant (Molina et al 2012a;Molina et al 2012b). Recently, hafnium based nanoparticles were grown in situ in GdBa2Cu3O7-δ coated conductors to improve the critical current of the superconductor (Tobita et al 2012).…”

Section: Introductionmentioning

confidence: 99%

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Fast, microwave-assisted synthesis of monodisperse HfO2 nanoparticles

et al. 2013

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A conventional solvothermal synthesis was compared to a microwave assisted method for the synthesis of HfO2 nanoparticles. In a microwave, the reaction could be completed in three hours, compared to three days in an autoclave. In the microwave synthesis the ensemble of particles was found to have a better size dispersion and a smaller average size (4 nm). The reaction mechanism was investigated and proof for an ether elimination process was provided. Post-synthetic modification with dopamine or dodecanoic acid permitted the suspension of the synthesized particles in both polar and apolar solvents, which is an advantage for further processing.keywords: Benzyl alcohol, microwave, ligand exchange, hafnium oxide 2

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fast, microwave-assisted synthesis of monodisperse HfO2 nanoparticles

et al. 2013

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“…These two Hf-O chemical bonds are detected at 752 cm -1 and 515 cm -1 and whose peak intensity increase directly with the concentration of np-HfO 2 [3][4]. [3][4]. Figure 3 shows the full I-V characteristics for a MOHOS structure (having a SiOx= 2nm) and we notice that a wide conduction window is formed after reaching the breakdown voltage of Vbkd ~3V.…”

Section: Methodsmentioning

confidence: 99%

“…We notice the characteristic absorption peaks for some common Si-O and Hf-O chemical bonds, thus confirming proper inclusion of the np-HfO 2 in the CTL. These two Hf-O chemical bonds are detected at 752 cm -1 and 515 cm -1 and whose peak intensity increase directly with the concentration of np-HfO 2 [3][4]. [3][4].…”

Section: Methodsmentioning

confidence: 99%

Performance of a MOHOS-type Memory Using HfO<sub>2</sub> nanoparticles as Charge Trapping Layer and Ultra-Thin Tunneling Oxide Thickness

Molina

Zúñiga

Gutierrez

et al. 2013

Trans. Mat. Res. Soc. Japan

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In this work, we use HfO 2 nanoparticles (np-HfO 2 , embedded in a spin-on glass SOG oxide matrix) as charge trapping layer (CTL) in Metal/Oxide/High-κ/Oxide/Silicon (MOHOS)-type non-volatile memory structures. By depositing the same CTL on an ultra-thin layer of chemical oxide (SiOx ≤ 2 nm), a distinctive trade-off is observed in both writing/erasing and data retention time characteristics when different thicknesses are used for the tunneling oxide. Specifically, better writing/erasing times are obtained while the data retention characteristics worsen when the tunneling oxide thickness decreases to less than 2 nm. The best memory performance is obtained for a CTL (∼120nm, based on np-HfO 2 ) deposited on a tunneling oxide of 1.5nm < SiOx < 2nm.

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“…1,2 Furthermore, the mixed metal oxide Hf1-XZrXO2 is a ferroelectric material of interest. 3,4 Nanocrystals of the group 4 oxides have many applications such as superconducting nanocomposites, 5,6 optical nanocomposites, [7][8][9] dentistry, 10 (photo)catalysis, [11][12][13] and X-ray computed tomography contrast agents. 14 Colloidal stability and control over nanocrystal size is a prerequisite for many of these technologies.…”

Section: Introductionmentioning

confidence: 99%

Mechanistic Insight into the Precursor Chemistry of ZrO2 and HfO2 Nanocrystals; towards Size-Tunable Syntheses

Pokratath

Eynden

Cooper

et al. 2021

Preprint

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One can nowadays readily generate monodisperse colloidal nanocrystals, but a retrosynthetic analysis is still not possible since the underlying chemistry is often poorly understood. Here, we provide insight into the reaction mechanism of colloidal zirconia and hafnia nanocrystals synthesized from metal chloride and metal isopropoxide. We identify the active precursor species in the reaction mixture through a combination of nuclear magnetic resonance spectroscopy (NMR), density functional theory (DFT) calculations, and pair distribution function (PDF) analysis. We gain insight into the interaction of the surfactant, tri-n-octylphosphine oxide (TOPO), and the different precursors. Interestingly, we identify a peculiar X-type ligand redistribution mechanism that can be steered by the relative amount of Lewis base (L-type). We further monitor how the reaction mixture decomposes using solution NMR and gas chromatography, and we find that ZrCl4 is formed as a by-product of the reaction, limiting the reaction yield. The reaction proceeds via two competing mechanisms: E1 elimination (dominating) and SN1 substitution (minor). Using this new mechanistic insight, we adapted the synthesis to optimize the yield and gain control over nanocrystal size. These insights will allow the rational design and synthesis of complex oxide nanocrystals.

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High-quality spin-on glass-based oxide as a matrix for embedding HfO2 nanoparticles for metal-oxide-semiconductor capacitors

Cited by 15 publications

References 4 publications

Fast, microwave-assisted synthesis of monodisperse HfO2 nanoparticles

Fast, microwave-assisted synthesis of monodisperse HfO2 nanoparticles

Performance of a MOHOS-type Memory Using HfO<sub>2</sub> nanoparticles as Charge Trapping Layer and Ultra-Thin Tunneling Oxide Thickness

Mechanistic Insight into the Precursor Chemistry of ZrO2 and HfO2 Nanocrystals; towards Size-Tunable Syntheses

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