Abstract:In this work, we use HfO 2 nanoparticles (np-HfO 2 , embedded in a spin-on glass SOG oxide matrix) as charge trapping layer (CTL) in Metal/Oxide/High-κ/Oxide/Silicon (MOHOS)-type non-volatile memory structures. By depositing the same CTL on an ultra-thin layer of chemical oxide (SiOx ≤ 2 nm), a distinctive trade-off is observed in both writing/erasing and data retention time characteristics when different thicknesses are used for the tunneling oxide. Specifically, better writing/erasing times are obtained whil… Show more
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