High-quality polycrystalline Si TFTs fabricated on stainless-steel foils by using sputtered Si films

Serikawa, Tadashi; Omata, Fujio

doi:10.1109/16.998590

Cited by 48 publications

(38 citation statements)

References 19 publications

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“…[5][6][7] The key processes in fabricating LTPS TFTs are the crystallization methods that convert a-Si into polycrystalline Si and ion doping for the formation of source/drain ohmic contact. The crystallization of an a-Si film is performed using an excimer laser with wave length of 308 nm.…”

Section: Introductionmentioning

confidence: 99%

Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays

2013

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Metal oxide optoelectronics is an emerging field that exploits the intriguing properties of the ns orbital-derived isotropic band structure as a replacement for traditional silicon-based electronics in advanced active-matrix information displays. Although the device performance of metal oxide thin film transistors (TFTs) has been substantially improved, the device reliability against external light and gate bias stress remains a critical issue. This paper provides a literature review of light-induced gate bias stress instability in metal oxide TFTs and explain the importance of photo-bias instability in the applications of metal oxide TFTs to optoelectronic device. The rationale of threshold voltage (V th ) instability under the negative bias illumination stress (NBIS) condition is discussed in detail. The charge trapping/injection model, oxygen vacancy photoionization model, and ambient interaction model are described as plausible degradation mechanisms. Finally, the possible approaches to prevent NBIS-induced V th instability are proposed based on an understanding of the NBIS instability.

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Section: Introductionmentioning

confidence: 99%

Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays

2013

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“…This phenomenon has not previously been observed for PMOS devices on bulk. In case of polysilicon material, existence of grain boundaries, which are potentially weak mechanical points, raise the possibility of formation of micro cracks along with the direction of grain boundaries at large level of tensile strain [16]. Creation of micro cracks changes the distribution of longitudinal stress throughout the TFT channel and may cause the mobility of both type devices to saturate.…”

Section: Resultsmentioning

confidence: 99%

Effects of mechanical strain on laser crystallized polysilicon thin film transistors and ring oscillators fabricated on stainless steel foil

Jamshidi-Roudbari

Kuo

Hatalis

2008

Solid-State Electronics

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“…As the key device used in flat panel displays, lowtemperature poly-Si (LTPS) thin-film transistors (TFTs) gain much research interest for building peripheral circuits on glass substrates to realize system-on-panel [1][2]. To assure circuit's long lifetime, much investigation on LTPS TFT's reliability has been done.…”

Section: Introductionmentioning

confidence: 99%

Degradation of static behaviour of poly-Si CMOS inverters under high frequency operation

Chen

Wang

Zhou

et al. 2011

18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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We studied the degradation of poly-Si CMOS inverters under high frequency operation. Increased low noise margin and logic threshold voltage, decreased high noise margin and gain were observed. Based on a previous drain current model of thinfilm transistors (TFTs), voltage transfer characteristic of inverter is well described. Large degradation was observed in p-TFT instead of n-TFT after 10 ks operation. Dynamic negative bias temperature instability is considered to be the degradation mechanism leading to the inverter's degradation.

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High-quality polycrystalline Si TFTs fabricated on stainless-steel foils by using sputtered Si films

Cited by 48 publications

References 19 publications

Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays

Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays

Effects of mechanical strain on laser crystallized polysilicon thin film transistors and ring oscillators fabricated on stainless steel foil

Degradation of static behaviour of poly-Si CMOS inverters under high frequency operation

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