High-quality InAs grown on GaAs substrate with an in situ micro-structured buffer

Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film

“…1 indicates the high quality of the grown layer. The value of the full-width at half-maximum (FWHM = 324 arcsec) for (4 0 0) plane is comparable to that of InAs epilayer on GaAs substrate (FWHM = 320) by molecular beam epitaxy [12]. The cross-section image of a typical sample indicates a sharp interface between the InAsSb film and InAs substrate.…”

High resolution X-ray diffraction study of InAs layers grown with and without bismuth flow on GaAs substrates by metalorganic vapor phase epitaxy

“…A two step method using InAs prelayer grown under In rich environment [4], or a graded buffer layer (InGaAs, InAlAs, GaInAlAs) [5,6], or a Te covered GaAs surface [7], have showed a clear improvement of the physical properties of active InAs layer. Substrate orientation and growth parameters were found to change the energy of surface reconstructions, the kinetics of adsorption, migration and desorption of adatoms [8][9][10][11][12]. Indeed, growth at lower temperatures or under low V/III ratio eliminated the multiple tilting of InAs crystal planes giving rise to InAs films aligned with their substrates [13].…”