High-quality Bi2Te3 thin films grown on mica substrates for potential optoelectronic applications

Wang, K.; Liu, Yanwen; Wang, Weiyi; Meyer, Nicholas; Bao, Lihong; He, Liang; Lang, Murong; Chen, Huajun; Y., X.; Post, Kirk; Zou, Jin; Basov, D. N.; Wang, K. L.; Xiu, Faxian

doi:10.1063/1.4813903

Cited by 53 publications

(38 citation statements)

References 37 publications

(29 reference statements)

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“…The thickness was determined by measuring the height of a scratch made carefully on thin films with AFM in tapping mode. 13 The composition analysis was carried out at the FEI Quanta FE-SEM. The magnetic property measurement was performed using a SQUID magnetometer.…”

Section: Methodsmentioning

confidence: 99%

Ferromagnetism of magnetically doped topological insulators in CrxBi2−xTe3 thin films

Zhang

Nlebedim

et al. 2015

Journal of Applied Physics

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We investigated the effect of magnetic doping on magnetic and transport properties of Bi2Te3thin films. CrxBi2−xTe3 thin films with x = 0.03, 0.14, and 0.29 were grown epitaxially on mica substrate with low surface roughness (∼0.4 nm). It is found that Cr is an electron acceptor in Bi2Te3 and increases the magnetization of CrxBi2−xTe3. When x = 0.14 and 0.29,ferromagnetism appears in CrxBi2−xTe3 thin films, where anomalous Hall effect and weak localization of magnetoconductance were observed. The Curie temperature, coercivity, and remnant Hall resistance of thin films increase with increasing Cr concentration. The Arrott-Noakes plot demonstrates that the critical mechanism of the ferromagnetism can be described better with 3D-Heisenberg model than with mean field model. Our work may benefit for the practical applications of magnetic topological insulators in spintronics and magnetoelectric devices.

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Section: Methodsmentioning

confidence: 99%

Ferromagnetism of magnetically doped topological insulators in CrxBi2−xTe3 thin films

Zhang

Nlebedim

et al. 2015

Journal of Applied Physics

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“…This method resulted in films with a flatter morphology and reduced 3D growth defects than single-step TI growths. High-quality films have been grown on a number of different substrates including GaAs(001) [63], GaAs(111)B [36], GaN [105], graphene [65], amorphous fused silica [106], and mica (110) [86,107]. It is possible that adapting the two-step growth method will facilitate bulk insulating Bi2Te3 films on a wide variety of substrates.…”

Section: Bi 2 Tementioning

confidence: 99%

Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review

2016

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Abstract:In this article, we will review recent progress in the growth of topological insulator (TI) thin films by molecular beam epitaxy (MBE). The materials we focus on are the V 2 -VI 3 family of TIs. These materials are ideally bulk insulating with surface states housing Dirac excitations which are spin-momentum locked. These surface states are interesting for fundamental physics studies (such as the search for Majorana fermions) as well as applications in spintronics and other fields. However, the majority of TI films and bulk crystals exhibit significant bulk conductivity, which obscures these states. In addition, many TI films have a high defect density. This review will discuss progress in reducing the bulk conductivity while increasing the crystal quality. We will describe in detail how growth parameters, substrate choice, and growth technique influence the resulting TI film properties for binary and ternary TIs. We then give an overview of progress in the growth of TI heterostructures. We close by discussing the bright future for TI film growth by MBE.

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“…The film thickness can be easily controlled by changing the deposition parameters, including laser pulse energy, deposition temperature, and processing time. Many investigations have shown that TIs presents interesting van der Waals epitaxial growth behavior on single-crystalline substrate and amorphous surface such as SiO 2 substrate43, mica substrate44, and Al 2 O 3 substrate45. Therefore, it has the potential to grow TIs on any substrate including soft-substrate for saturable absorption applications.…”

mentioning

confidence: 99%

High-quality and Large-size Topological Insulator Bi2Te3-Gold Saturable Absorber Mirror for Mode-Locking Fiber Laser

Chen

Tsai

Cheng

et al. 2016

Sci Rep

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A novel high-quality, large-size, reflection-type topological insulator Bi2Te3-Gold (BG) film-based nonlinear optical modulator has been successfully fabricated as a two-dimensional saturable absorber mirror (SAM) by pulsed laser deposition (PLD). This BG-SAM possesses saturation fluence of 108.3 μJ/cm2, modulation depth (ΔR) of 6.5%, non-saturable loss of 38.4%, high damage threshold above 1.354 mJ/cm2 and excellent uniformity providing for the generation of passive mode-locked (ML) pulses for erbium-doped fiber lasers (EDFLs) on a large sample area. Under 124 mW 976 nm pumping, We obtained 452-fs continuous-wave ML pulses with pulse energy of 91 pJ and full width at half-maximum (FWHM) of 6.72-nm from this EDFL. The results clearly evidence that the PLD is an efficient method for fabricating BG-SAM that is suitable for a compact ultrafast ML fiber laser system.

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High-quality Bi2Te3 thin films grown on mica substrates for potential optoelectronic applications

Cited by 53 publications

References 37 publications

Ferromagnetism of magnetically doped topological insulators in CrxBi2−xTe3 thin films

Ferromagnetism of magnetically doped topological insulators in CrxBi2−xTe3 thin films

Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review

High-quality and Large-size Topological Insulator Bi2Te3-Gold Saturable Absorber Mirror for Mode-Locking Fiber Laser

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