Ferromagnetism of magnetically doped topological insulators in CrxBi2−xTe3 thin films

Ni, Yan; Zhang, Z.; Nlebedim, Ikenna C.; Hadimani, Ravi L.; Tuttle, G.; Jiles, David

doi:10.1063/1.4918560

Cited by 21 publications

(18 citation statements)

References 19 publications

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“…Interestingly this model finds its applications in topological insulators, refs. [378,379], where it is observed that the magnetoconductance starts showing hysteresis behavior similar to magnetization as magnetic doping increases. This is called hysteric magnetoconductance phase.…”

Section: Topological Effectsmentioning

confidence: 99%

Holographic axion model: A simple gravitational tool for quantum matter

Baggioli

Kim

et al. 2021

Sci. China Phys. Mech. Astron.

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This is a complete and exhaustive review on the so-called holographic axion model-a bottom-up holographic system characterized by the presence of a set of shift symmetric scalar bulk fields whose profiles are taken to be linear in the spatial coordinates. This simple model implements the breaking of translational invariance of the dual field theory by retaining the homogeneity of the background geometry and therefore allowing for controllable and fast computations. The usages of this model are very vast and they are a proof of the spectacular versatility of the framework. In this review, we touch upon all the up-to-date aspects of this model from its connection with massive gravity and effective field theories, to its role in modeling momentum dissipation and elastic properties ending with all the phenomenological features and its hydrodynamic description. In summary, this is a complete guide to one of the most used models in Applied Holography and a must-read for any researcher entering this field.

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Section: Topological Effectsmentioning

confidence: 99%

Holographic axion model: A simple gravitational tool for quantum matter

Baggioli

Kim

et al. 2021

Sci. China Phys. Mech. Astron.

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“…Since the discovery of TIs, considerable experimental effort has been dedicated to achieve long-range magnetic order in two prototypical TIs, Bi 2 Se 3 and Bi 2 Te 3 , by doping with different TM atoms, such as Cr, Mn, or Fe, in both bulk and thin film geometries [17][18][19][20][21][22][23][24][25][26][27]. Significant theoretical work has also been undertaken to understand the mechanism of magnetism in transition metal (TM) doped TIs [28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43]. For some of the magnetic TIs where the QAHE has been observed, such as Cr-doped (Bi,Sb) 2 Te 3 , it has been proposed that the mechanism driving the ferromagnetic transition is based on the Van Vleck spin susceptibility [4].…”

Section: Introductionmentioning

confidence: 99%

Systematics of electronic and magnetic properties in the transition metal doped Sb2Te3 quantum anomalous Hall platform

et al. 2018

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The quantum anomalous Hall effect (QAHE) has recently been reported to emerge in magnetically doped topological insulators. Although its general phenomenology is well established, the microscopic origin is far from being properly understood and controlled. Here, we report on a detailed and systematic investigation of transition metal (TM) doped Sb 2 Te 3. By combining density functional theory calculations with complementary experimental techniques, i.e., scanning tunneling microscopy, resonant photoemission, and x-ray magnetic circular dichroism, we provide a complete spectroscopic characterization of both electronic and magnetic properties. Our results reveal that the TM dopants not only affect the magnetic state of the host material, but also significantly alter the electronic structure by generating impurity-derived energy bands. Our findings demonstrate the existence of a delicate interplay between electronic and magnetic properties in TM doped topological insulators. In particular, we find that the fate of the topological surface states critically depends on the specific character of the TM impurity: while V-and Fe-doped Sb 2 Te 3 display resonant impurity states in the vicinity of the Dirac point, Cr and Mn impurities leave the energy gap unaffected. The single-ion magnetic anisotropy energy and easy axis, which control the magnetic gap opening and its stability, are also found to be strongly TM impurity dependent and can vary from in plane to out of plane depending on the impurity and its distance from the surface. Overall, our results provide general guidelines for the realization of a robust QAHE in TM doped Sb 2 Te 3 in the ferromagnetic state.

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“…However, the sensitivity of Mn doped TI AHE sensor is much lower than other AHE sensor reported. Previously work on Cr doped Bi2Te3 [16] shows that Cr introduces much stronger magnetization in the system than Mn indicating that the sensitivity of AHE sensor based on it will be very high. In order to seek a much higher sensitivity AHE senor based on TI, in this work, we fabricate Hall effect sensors based on Cr-doped Bi2Te3 TI thin films.…”

mentioning

confidence: 99%

Ultrahigh Sensitivity of Anomalous Hall Effect Sensor Based on Cr-Doped Bi₂Te₃Topological Insulator Thin Films

Zhang

Nlebedim

et al. 2016

IEEE Trans. Magn.

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Anomalous Hall effect (AHE) was recently discovered in magnetic element-doped topological insulators (TIs), which promises low power consumption and high efficiency spintronics and electronics. This discovery broadens the family of Hall sensors. In this paper, AHE sensors based on Cr-doped Bi2Te3 topological insulator thin films are studied with two thicknesses (15 and 65 nm). It is found, in both cases, that ultrahigh Hall sensitivity can be obtained in Cr-doped Bi2Te3. Hall sensitivity reaches 1666 Ω/T in the sensor with the 15 nm TI thin film, which is higher than that of the conventional semiconductor HE sensor. The AHE of 65 nm sensors is even stronger, which causes the sensitivity increasing to 2620 Ω/T. Furthermore, after comparing Cr-doped Bi2Te3 with the previously studied Mn-doped Bi2Te3 TI Hall sensor, the sensitivity of the present AHE sensor shows about 60 times higher in 65 nm sensors. The implementation of AHE sensors based on a magnetic-doped TI thin film indicates that the TIs are good candidates for ultrasensitive AHE sensors. KeywordsAnomalous Hall effect sensor, topological insulators, thin films, sensitivity Anomalous Hall effect (AHE) is recently discovered in magnetic element doped topological insulators (TIs), which promises low power consumption and high efficiency spintronics and electronics. This discovery broadens the family of Hall sensors. In this work, AHE sensors based on Cr doped Bi2Te3 topological insulator thin films are studied with two thicknesses (15 nm and 65 nm). It is found in both cases that ultrahigh Hall sensitivity can be obtained in Cr doped Bi2Te3. Hall sensitivity reaches 1666 Ω/T in sensor with 15nm TI thin film which is higher than that of the conventional semiconductor Hall effect sensor. The anomalous Hall effect of 65 nm sensors is even stronger, which causes the sensitivity increasing to 2620 Ω/T. Moreover, after comparing Cr doped Bi2Te3 with previously studied Mn doped Bi2Te3 TI Hall sensor, the sensitivity of present AHE sensor shows about 60 times higher in 65 nm sensors. The implementation of AHE sensors based on magnetic doped TI thin film indicates that the TIs are good candidates for ultra-sensitive AHE sensors.

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Ferromagnetism of magnetically doped topological insulators in CrxBi2−xTe3 thin films

Cited by 21 publications

References 19 publications

Holographic axion model: A simple gravitational tool for quantum matter

Holographic axion model: A simple gravitational tool for quantum matter

Systematics of electronic and magnetic properties in the transition metal doped Sb2Te3 quantum anomalous Hall platform

Ultrahigh Sensitivity of Anomalous Hall Effect Sensor Based on Cr-Doped Bi₂Te₃Topological Insulator Thin Films

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Ferromagnetism of magnetically doped topological insulators in CrxBi2−xTe3 thin films

Cited by 21 publications

References 19 publications

Holographic axion model: A simple gravitational tool for quantum matter

Holographic axion model: A simple gravitational tool for quantum matter

Systematics of electronic and magnetic properties in the transition metal doped Sb2Te3 quantum anomalous Hall platform

Ultrahigh Sensitivity of Anomalous Hall Effect Sensor Based on Cr-Doped Bi2Te3Topological Insulator Thin Films

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Ultrahigh Sensitivity of Anomalous Hall Effect Sensor Based on Cr-Doped Bi₂Te₃Topological Insulator Thin Films