High-quality, 2-inch-diameter m-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds

Tsukada, Yusuke; Enatsu, Yuuki; Kubo, Shin‐ichi; Ikeda, Hirofumi; Kurihara, K.; Matsumoto, Hajime; Nagao, Shijo; Mikawa, Yutaka; Fujito, Kenji

doi:10.7567/jjap.55.05fc01

Cited by 35 publications

(24 citation statements)

References 32 publications

(37 reference statements)

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“…13. In addition, an n-type low-resistivity (q ¼ 8.5 Â 10 À3 X cm), very low TDD ($10 4 cm À2 ) m-plane FS-GaN wafer 27 named M2 was grown by HVPE on a nearly bowing-free bulk GaN seed wafer, which was synthesized by the ammonothermal (AT) method in supercritical ammonia using an acidic mineralizer. 28 We note that particular AT method used by Mitsubishi Chemical Corporation is named supercritical acidic ammonia technology (SCAAT TM ).…”

Section: A Gan Samplesmentioning

confidence: 99%

“…34 We tentatively use these conditions and assumptions for discussing the high quality n-type HVPE FS-GaN samples. [25][26][27] For probing the local carrier dynamics, the spatio-timeresolved cathodoluminescence (STRCL) measurement [35][36][37][38] was carried out on several HVPE FS-GaN samples. 25 By using STRCL, spatially resolved steady-state cathodoluminescence (SRCL) spectra and very local time-resolved cathodoluminescence (TRCL) signals can be obtained.…”

Section: A Gan Samplesmentioning

confidence: 99%

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The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

Chichibu

Uedono

Kojima

et al. 2018

Journal of Applied Physics

132

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Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrateThe nonradiative lifetime (s NR ) of the near-band-edge emission in various quality GaN samples is compared with the results of positron annihilation measurement, in order to identify the origin and to determine the capture-cross-section of the major intrinsic nonradiative recombination centers (NRCs). The room-temperature s NR of various n-type GaN samples increased with decreasing the concentration of divacancies composed of a Ga vacancy (V Ga ) and a N vacancy (V N ), namely, V Ga V N . The s NR value also increased with increasing the diffusion length of positrons, which is almost proportional to the inverse third root of the gross concentration of all point defects. The results indicate that major intrinsic NRC in n-type GaN is V Ga V N . From the relationship between its concentration and s NR , its hole capture-cross-section is estimated to be about 7 Â 10 À14 cm 2 . Different from the case of 4H-SiC, the major NRCs in p-type and n-type GaN are different: the major NRCs in Mg-doped p-type GaN epilayers are assigned to multiple vacancies containing a V Ga and two (or three) V N s, namely, V Ga (V N ) n (n ¼ 2 or 3). The ion-implanted Mgdoped GaN films are found to contain larger size vacancy complexes such as (V Ga ) 3 (V N ) 3 . In analogy with GaN, major NRCs in Al 0.6 Ga 0.4 N alloys are assigned to vacancy complexes containing an Al vacancy or a V Ga . Published by AIP Publishing. https://doi.

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Section: A Gan Samplesmentioning

confidence: 99%

Section: A Gan Samplesmentioning

confidence: 99%

The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

Chichibu

Uedono

Kojima

et al. 2018

Journal of Applied Physics

132

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“…The first results of such a hybrid approach: HVPE-GaN growth on Am-GaN, were presented by IHPP PAS in 2013 [48]. Then, similar work was shown by MCC [49], and later, many other papers were published. They are summarized in References [23,50].…”

Section: Hvpe-gan On Native Ammonothermal Gan Seedsmentioning

confidence: 85%

GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices

et al. 2020

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Recent results of GaN bulk growth performed in Poland are presented. Two technologies are described in detail: halide vapor phase epitaxy and basic ammonothermal. The processes and their results (crystals and substrates) are demonstrated. Some information about wafering procedures, thus, the way from as-grown crystal to an epi-ready wafer, are shown. Results of other groups in the world are briefly presented as the background for our work.

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“…Early works on the MOVPE growth of III–V materials established that N 2 carrier gas can be beneficial for surface morphology, structural quality, and compositional homogeneity . Recently, improved surface morphologies and low extended defect densities have been reported for m ‐plane GaN regrowth by using N 2 carrier gas instead of H 2 in hydride vapor phase epitaxy (HVPE) and homoepitaxial HVPE growth with N 2 has also been adopted for producing high‐quality 2‐inch m ‐plane GaN substrates . However, to our best knowledge, the effect of the carrier gas (hydrogen vs. nitrogen) on the unintentional impurity incorporation in m ‐plane GaN and the mechanism of impurities reduction thereof have yet to be elucidated.…”

Section: Impurity Concentrations In the M‐gan Epi‐layers Grown In H2 mentioning

confidence: 99%

Reduction of Residual Impurities in Homoepitaxial m‐Plane GaN by Using N₂ Carrier Gas in Metalorganic Vapor Phase Epitaxy

Barry

Lekhal

Bae

et al. 2018

Physica Rapid Research Ltrs

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The reduction of unintentional impurities in m-plane 10 10Þð GaN homoepitaxial layers is demonstrated by using nitrogen (N 2 ), as opposed to hydrogen (H 2 ), as carrier gas in metalorganic vapor phase epitaxy (MOVPE). Secondary ion mass spectrometry (SIMS) analysis shows that the impurity levels of residual oxygen (O), carbon (C), and silicon (Si) are decreased by nearly one order of magnitude in N 2 -grown samples. Although the full width at half maximum (FWHM) values for the on-axis m-plane X-ray rocking curves of all specimens are quite similar (around 50 arcsec), plan-view scanning transmission electron microscopy (STEM) measurements reveal a clear reduction of dislocation densities in N 2 -grown films. Their origin is likely related to an initial surface roughening with H 2 carrier gas, which also causes surface faceting resulting in the formation of large four-sided pyramidal hillocks, while using N 2 results in smoother surfaces. Hence, MOVPE growth with N 2 carrier gas is an effective method to lower the impurity incorporation in mplane GaN materials in addition to reducing the formation of defects and improving the surface morphology, which can enable the development of high-performance GaN-based devices on non-polar surfaces.GaN is an attractive material for optoelectronics and high-power electronics applications, due to its direct wide band gap, high electron mobility, high electron saturation velocity, high stability and conductivity. GaN materials grown in non-polar orientations (a-or m-plane) are devoid of spontaneous polarization and piezoelectric fields which can enable novel highperformance electronic devices owing to the suppression of the quantum confined Stark effect. [1] As a result, extensive and ongoing research efforts have been devoted to the growth and characterization of nonpolar nitrides worldwide in order to better comprehend their material properties and challenges. Moreover, the advent of low defect lattice-matched bulk GaN substrates has provided a significant progress for high-quality GaN crystals, and improved performance of GaN-based devices. [2] Hitherto, promising results have been reported for light-emitting diodes, [3] laser diodes, [4] and normally off high-electron-mobility transistors [5] on nearly dislocation-free m-plane GaN (m-GaN) substrates. However, homoepitaxial m-GaN films grown on nominally on-axis bulk GaN by metalorganic vapor phase epitaxy (MOVPE) commonly exhibit wavy surface morphologies featuring pyramidal hillocks and are prone to high impurity intake. [6][7][8] While the surface morphology can be improved by using much expensive miscut GaN substrates, [6] the higher unintentional oxygen (O), carbon (C), and silicon (Si) impurities incorporation in m-plane GaN layers remains an issue which hinders further progress in device performance and reliability. Therefore, it is crucial to enhance the material properties of homoepitaxial m-plane GaN in the most cost-effective way via epitaxial growth engineering.Early works on the MOVPE growth of III-V materials es...

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High-quality, 2-inch-diameter m-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds

Cited by 35 publications

References 32 publications

The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices

Reduction of Residual Impurities in Homoepitaxial m‐Plane GaN by Using N₂ Carrier Gas in Metalorganic Vapor Phase Epitaxy

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High-quality, 2-inch-diameter m-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds

Cited by 35 publications

References 32 publications

The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices

Reduction of Residual Impurities in Homoepitaxial m‐Plane GaN by Using N2 Carrier Gas in Metalorganic Vapor Phase Epitaxy

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Reduction of Residual Impurities in Homoepitaxial m‐Plane GaN by Using N₂ Carrier Gas in Metalorganic Vapor Phase Epitaxy