In order to achieve high breakdown voltage in GaN vertical power devices, low threading dislocation density and low background carrier concentration is required. This work demonstrates a decrease in the background carrier concentration and threading dislocation density (TDD) with an increase in the thickness of un-intentionally doped (UID) GaN grown on sapphire. p-n diodes grown and fabricated on this epi, . This is the highest reported FOM value for p-n diodes on GaN on sapphire or Si. Lowering the carrier concentration and dislocation density is thus shown to be critical for achieving high breakdown voltages on GaN on sapphire.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.