High quality (111)B GaAs, AlGaAs, AlGaAs/GaAs modulation doped heterostructures and a GaAs/InGaAs/GaAs quantum well

Chin, Albert; Martin, Paul; Ho, P.; Ballingall, J. M.; Yu, T.; Mazurowski, John

doi:10.1063/1.106182

Cited by 45 publications

(13 citation statements)

References 7 publications

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“…Miscut samples are prevalent in the literature, for example (111) GaAs/AlAs growth has been shown to have superior morphology with a miscut angle from 0.5 • to 4 • and in general, intentional miscuts improve growth quality due to slip-step growth [69][70][71][72] . In Si, recently investigated hydrogen terminated (111)Si miscut surfaces have shown very high mobility 73 and the wafer miscut is expected to break the valley degeneracy 43,74 .…”

Section: Valley Degeneracy In Miscut Samplesmentioning

confidence: 99%

Valley degeneracy in biaxially strained aluminum arsenide quantum wells

et al. 2011

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This paper describes a complete analytical formalism for calculating electron subband energy and degeneracy in strained multi-valley quantum wells grown along any orientation with explicit results for AlAs quantum wells. In analogy to the spin index, the valley degree of freedom is justified as a pseudospin index due to the vanishing intervalley exchange integral. A standardized coordinate transformation matrix is defined to transform between the conventional-cubic-cell basis and the quantum well transport basis whereby effective mass tensors, valley vectors, strain matrices, anisotropic strain ratios, piezoelectric fields, and scattering vectors are all defined in their respective bases. The specific cases of (001) (411)-oriented QWs and we define and solve for a shear-to-biaxial strain ratio. The notation is generalized to address non-Miller-indexed planes so that miscut substrates can also be treated, and the treatment can be adapted to other multi-valley biaxially strained systems. To help classify anisotropic intervalley scattering, a valley scattering primitive unit cell is defined in momentum space which allows one to distinguish purely in-plane momentum scattering events from those that require an out-of-plane momentum component.

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Section: Valley Degeneracy In Miscut Samplesmentioning

confidence: 99%

Valley degeneracy in biaxially strained aluminum arsenide quantum wells

et al. 2011

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“…1(c)]. To avoid hillock formation, many groups have adopted the use of offcut substrates, which promote step flow growth rather than 3D islanding, 58,[65][66][67][68] but the optimization of growth conditions is seldom reported, and smooth growth remains challenging. [69][70][71] Furthermore, much of the early work on (110) and (111) growth was performed prior to widespread availability of commercial AFMs and so morphology studies were often limited to optical microscopy.…”

Section: B Challenges In Iii-v Growth On (111) and (110) Substratesmentioning

confidence: 99%

“…69 However, growth of smooth indium-containing materials such as InGaAs (111)B, under these same reconstructions, is difficult due to the high desorption rate of indium above T g ¼ 530 C. 85,86 Due to these challenges, the use of offcut substrates became the primary solution to achieve smooth GaAs(111)B growth. 66,67,85 Yang et al identified that the hillocks formed on GaAs(111)B were composed of three vicinal (111) "facets" inclined $2 from the singular plane. 85 They proposed that these vicinal facets were more energetically stable than the singular (111) plane and thereby demonstrated that tilting the surface toward these planes by 1 -3 in the h211i directions promoted smooth growth.…”

Section: Ingaas(111)a: Summarymentioning

confidence: 99%

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Yerino

Liang

Huffaker

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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For more than 50 years, research into III-V compound semiconductors has focused almost exclusively on materials grown on (001)-oriented substrates. In part, this is due to the relative ease with which III-Vs can be grown on (001) surfaces. However, in recent years, a number of key technologies have emerged that could be realized, or vastly improved, by the ability to also grow high-quality III-Vs on (111)-or (110)-oriented substrates These applications include: nextgeneration field-effect transistors, novel quantum dots, entangled photon emitters, spintronics, topological insulators, and transition metal dichalcogenides. The first purpose of this paper is to present a comprehensive review of the literature concerning growth by molecular beam epitaxy (MBE) of III-Vs on (111) and (110) substrates. The second is to describe our recent experimental findings on the growth, morphology, electrical, and optical properties of layers grown on non-(001) InP wafers. Taking InP(111)A, InP(111)B, and InP(110) substrates in turn, the authors systematically discuss growth of both In 0.52 Al 0.48 As and In 0.53 Ga 0.47 As on these surfaces. For each material system, the authors identify the main challenges for growth, and the key growth parameter-property relationships, trends, and interdependencies. The authors conclude with a section summarizing the MBE conditions needed to optimize the structural, optical and electrical properties of GaAs, InAlAs and InGaAs grown with (111) and (110) orientations. In most cases, the MBE growth parameters the authors recommend will enable the reader to grow high-quality material on these increasingly important non-(001) surfaces, paving the way for exciting technological advances.

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“…However, recently this problem has been overcome and good quality, reproducible growth has been achieved using conventional molecular beam epitaxy ͑MBE͒. 13,19,20 A few strain relaxation studies have been published. Anan et al 21 have determined the critical thickness of the InGaAs/GaAs͑111͒B heterostructures, with a misorientation of 2°towards ͓011͔ and high In contents of 0.4-0.6, by measuring the surface lattice parameter changes using reflection high energy electron diffraction ͑RHEED͒ streak separation.…”

Section: Introductionmentioning

confidence: 99%