Relaxation mechanisms in single InxGa1−xAs epilayers grown on misoriented GaAs(111¯)B substrates

Edirisinghe, S. P.; Staton‐Bevan, A. E.; Grey, R.

doi:10.1063/1.366349

Cited by 16 publications

(4 citation statements)

References 27 publications

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“…Evidence of the role of temperature in the elastic limit reduction and in the nucleation of dislocation half-loops from surface steps is obtained. Steps in real crystals are rarely straight, and it has been proposed that a notch or kinked-step would initiate the nucleation of a dislocation half-loop [20,21]. This is investigated here by comparing the plastic events obtained from either straight and non-straight steps.…”

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confidence: 99%

Effects of temperature and surface step on the incipient plasticity in strained aluminium studied by atomistic simulations

et al. 2007

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Atomistic simulations using an EAM potential are carried out to investigate the first stages of plasticity in aluminum slabs, in particular the effect of both temperature and step geometry on the nucleation of dislocations from surface steps. Temperature is shown to significantly reduce the elastic limit, and to activate the nucleation of dislocation half-loops. Twinning occurs by successive nucleations in adjacent glide planes. The presence of a kinked step is shown to have no influence on the nucleation mechanisms.

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confidence: 99%

Effects of temperature and surface step on the incipient plasticity in strained aluminium studied by atomistic simulations

et al. 2007

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“…In the case of -1° offcut the experimental critical thickness t c seemed smaller than for the nominal (111) orientation. (ii) For 2° off-cut [23], 60° misfit dislocations were observed in the three {111} planes inclined to the surface for film thicknesses around t c . However the dislocation density was found higher in the ) 11 1 ( plane.…”

Section: Generation At the Interface Or Within The Filmmentioning

confidence: 98%

Dislocation nucleation in heteroepitaxial semiconducting films

Pichaud

Burle

Texier

et al. 2009

Phys. Status Solidi (c)

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The nucleation of dislocation in semiconductors is still a matter of debate and especially in heteroepitaxial films. To understand this nucleation process the classical models of dislocation nucleation are presented and criticized. Two main points are then developed: emission of dislocations from surface steps and the role of point defects agglomeration on dislocation nucleation. Recent atomic simulation of half loops emission from surface steps and experimental evidences of anisotropic relaxation of GaInAs films deposited on vicinal (111) GaAs substrates strongly support surface steps as preferential sites for nucleation. In low temperature buffer layer structures (SiGe/Si) an original dislocation structure is observed which corresponds to the dislocation emission in different glide systems by a unique nucleation centre. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…ii. For 2° off-cut [21] around t c , 60° MDs were observed in the three {111} planes inclined to the surface. However the dislocation density was found higher in the planes, the major defects are nano-twins in the same planes (Fig.…”

Section: Figurementioning

confidence: 99%

Dislocation Nucleation in Heteroepitaxial Semiconducting Films

Pichaud

Burle

Texier

et al. 2009

SSP

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The nucleation of dislocation in semiconductors is still a matter of debate and especially in heteroepitaxial films. To understand this nucleation process the classical models of dislocation nucleation are presented and discussed. Two main points are then developed: emission of dislocations from surface steps and the role of point defects agglomeration on dislocation nucleation. Recent atomic simulation of half loops emission from surface steps and experimental evidences of anisotropic relaxation of GaInAs films deposited on vicinal (111) GaAs substrates strongly support surface steps as preferential sites for nucleation. In low temperature buffer layer structures (SiGe/Si) an original dislocation structure is observed which corresponds to the dislocation emission in different glide systems by a unique nucleation centre.

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Relaxation mechanisms in single InxGa1−xAs epilayers grown on misoriented GaAs(111¯)B substrates

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Cited by 16 publications

References 27 publications

Effects of temperature and surface step on the incipient plasticity in strained aluminium studied by atomistic simulations

Effects of temperature and surface step on the incipient plasticity in strained aluminium studied by atomistic simulations

Dislocation nucleation in heteroepitaxial semiconducting films

Dislocation Nucleation in Heteroepitaxial Semiconducting Films

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