High-Q multi-frequency ring-shaped piezoelectric MEMS resonators

Bao, Feihong; Wu, Qi-Die; Zhou, Xin; Wu, Ting; Bao, Jingfu

doi:10.1016/j.mejo.2020.104733

“…Ref. [64] believed that the stray modes of the resonator will inevitably damage the quality factor, and proposed to suppress the stray modes by optimizing the electrodes to distribute the charge density uniformly in the z-direction. The results show that the quality factor of the proposed resonator reaches 10,069 at 83.59 MHz, which is 2.7 times higher than the ordinary one.…”

Section: Other Lossesmentioning

confidence: 99%

Concepts and Key Technologies of Microelectromechanical Systems Resonators

Feng

¹

,

Yuan

²

,

Yu

³

et al. 2022

Micromachines

6

0

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In this paper, the basic concepts of the equivalent model, vibration modes, and conduction mechanisms of MEMS resonators are described. By reviewing the existing representative results, the performance parameters and key technologies, such as quality factor, frequency accuracy, and temperature stability of MEMS resonators, are summarized. Finally, the development status, existing challenges and future trend of MEMS resonators are summarized. As a typical research field of vibration engineering, MEMS resonators have shown great potential to replace quartz resonators in timing, frequency, and resonant sensor applications. However, because of the limitations of practical applications, there are still many aspects of the MEMS resonators that could be improved. This paper aims to provide scientific and technical support for the improvement of MEMS resonators in timing, frequency, and resonant sensor applications.

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“…The devices like pressure sensors, accelerometers, gyroscope, and temperature sensors are the few most sort after MEMS sensors for these applications [8,[11][12][13][14][15]. On the other hand, smart actuation mechanisms like shape-memory effect, electrostatic, magnetic and piezoelectric are intelligently employed to perform the various desired microscopic operation with great precision [7,14,[16][17][18][19][20] Ever since the introduction of the famous mechanical resonator gate transistor reported by Nathan et al [21], micro-resonators are the important building block of many MEMS devices [22][23][24][25][26][27][28][29]. Today, MEMS-based resonators have been used in oscillators [5], filters [16], gyroscope [11], micro-speaker [30], etc.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of residual stress of c oriented AlN/Si (111) and its impact on mushroom-shaped piezoelectric resonator

Pandey

¹

,

Dutta

²

,

Gupta

³

et al. 2021

J Mater Sci: Mater Electron

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Aluminum nitride-based MEMS resonators are one of the interesting recent research topics for its tremendous potential in a wide variety of applications. This paper focuses on the detrimental effect of residual stress on the AlN based MEMS resonator design for acoustic applications. The residual stress in the sputtered c axis (<001>) preferred oriented AlN layers on Si (111) substrates are studied as a function of layer thickness. The films exhibited compressive residual stresses at different thickness values: -1050 MPa (700 nm), -500 MPa (900 nm), and -230 MPa (1200 nm). A mushroom-shaped AlN based piezoelectric MEMS resonator structure has been designed for the different AlN layer thicknesses. The effect of the residual stresses on the mode shapes, resonant frequencies, and quality factor (Q) of the resonator structures are studied. The resonant frequency of the structures are altered from 235 kHz, 280 kHz, and 344 kHz to 65 kHz, 75 kHz and 371 kHz due to the residual stress of -1050 MPa (thickness: 700 nm), -500 MPa (thickness: 900 nm) and -230 MPa (thickness: 1200 nm) respectively. At no residual stress, the quality factors of the resonator structures are 248, 227, 241 corresponding to the 700 nm, 900 nm, and 1200 nm thick AlN layers respectively. The presence of the residual stress reduced the Q values from 248 (thickness: 700 nm), 227 (thickness: 900 nm), 241 (thickness: 1200 nm) to 28, 53, and 261 respectively.

show abstract

“…The devices like pressure sensors, accelerometers, gyroscope, and temperature sensors are the few most sort after MEMS sensors for these applications [8,[11][12][13][14][15]. On the other hand, smart actuation mechanisms like shape-memory effect, electrostatic, magnetic and piezoelectric are intelligently employed to perform the various desired microscopic operation with great precision [7,14,[16][17][18][19][20] Ever since the introduction of the famous mechanical resonator gate transistor reported by Nathan et al [21], micro-resonators are the important building block of many MEMS devices [22][23][24][25][26][27][28][29]. Today, MEMS-based resonators have been used in oscillators [5], filters [16], gyroscope [11], micro-speaker [30], etc.…”

Section: Introductionmentioning

confidence: 99%

“…Bao et al [23] successfully implemented AlNbased SOI MEMS resonators having improved quality factor (Q factor). The team also (Bao et al [24]) presented AlN based high-Q multi-frequency ring-shaped piezoelectric MEMS resonators. However, any of the above research articles have not discussed the effect of residual stress in AlN layers on Si (111) substrate with the varying thickness on the performance of the MEMS resonator structure.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Residual Stress of C Oriented AlN/Si (111) and Its Impact on Mushroom Shaped Piezoelectric Resonator 

Pandey

¹

,

Dutta

²

,

Gupta

³

et al. 2021

Preprint

1

0

View full text Add to dashboard Cite

Aluminum nitride-based MEMS resonators are one of the interesting recent research topics for its tremendous potential in a wide variety of applications. This paper focuses on the detrimental effect of residual stress on the AlN based MEMS resonator design for acoustic applications. The residual stress in the sputtered c axis (<001>) preferred oriented AlN layers on Si (111) substrates are studied as a function of layer thickness. The films exhibited compressive residual stresses at different thickness values: -1050 MPa (700 nm), -500 MPa (900 nm), and -230 MPa (1200 nm). A mushroom-shaped AlN based piezoelectric MEMS resonator structure has been designed for the different AlN layer thicknesses. The effect of the residual stresses on the mode shapes, resonant frequencies, and quality factor (Q) of the resonator structures are studied. The resonant frequency of the structures are altered from 235 kHz, 280 kHz, and 344 kHz to 65 kHz, 75 kHz and 371 kHz due to the residual stress of -1050 MPa (thickness: 700 nm), -500 MPa (thickness: 900 nm) and -230 MPa (thickness: 1200 nm) respectively. At no residual stress, the quality factors of the resonator structures are 248, 227, 241 corresponding to the 700 nm, 900 nm, and 1200 nm thick AlN layers respectively. The presence of the residual stress reduced the Q values from 248 (thickness: 700 nm), 227 (thickness: 900 nm), 241 (thickness: 1200 nm) to 28, 53, and 261 respectively.

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High-Q multi-frequency ring-shaped piezoelectric MEMS resonators

Cited by 3 publications

References 36 publications

Concepts and Key Technologies of Microelectromechanical Systems Resonators

Concepts and Key Technologies of Microelectromechanical Systems Resonators

Evaluation of residual stress of c oriented AlN/Si (111) and its impact on mushroom-shaped piezoelectric resonator

Evaluation of Residual Stress of C Oriented AlN/Si (111) and Its Impact on Mushroom Shaped Piezoelectric Resonator

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High-Q multi-frequency ring-shaped piezoelectric MEMS resonators

Cited by 3 publications

References 36 publications

Concepts and Key Technologies of Microelectromechanical Systems Resonators

Concepts and Key Technologies of Microelectromechanical Systems Resonators

Evaluation of residual stress of c oriented AlN/Si (111) and its impact on mushroom-shaped piezoelectric resonator

Evaluation of Residual Stress of C Oriented AlN/Si&nbsp;(111) and Its Impact on Mushroom Shaped Piezoelectric Resonator&nbsp;

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Evaluation of Residual Stress of C Oriented AlN/Si (111) and Its Impact on Mushroom Shaped Piezoelectric Resonator