High-Q capacitors implemented in a CMOS process for low-power wireless applications

Hung, Chih‐Ming; Ho, Yo-Chuol; Wu, I-Feng; O, K.

doi:10.1109/22.668648

Cited by 94 publications

(19 citation statements)

References 3 publications

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“…This indicates the good accuracy of the physically based model. The at RF frequency is shown in (1), which can be obtained by differentiating the measured [19] shown in (2) (1)…”

Section: Resultsmentioning

confidence: 99%

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High-density MIM capacitors using AlTaO_x dielectrics

Yang

Huang

Chin

et al. 2003

IEEE Electron Device Lett.

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The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF m 2 using high-AlTaO fabricated at 400 C. In addition, small voltage dependence of capacitance of 600 ppm (quadratic voltage coefficient of only 130 ppm V 2 ) is obtained at 1 GHz using their mathematical derivation from measured high-frequency parameters. These good results ensure the high-AlTaO MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.

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“…This indicates the good accuracy of the physically based model. The at RF frequency is shown in (1), which can be obtained by differentiating the measured [19] shown in (2) (1)…”

Section: Resultsmentioning

confidence: 99%

“…A CCORDING to the ITRS roadmap, the continuously increasing MIM capacitor density [1], [2] is required to achieve a smaller chip area and lower IC cost. Thus, searching for proper high-dielectrics [3]- [11] is the primary challenge because decreasing dielectric thickness ( ) will increase the unwanted leakage current exponentially.…”

Section: Introductionmentioning

confidence: 99%

High-density MIM capacitors using AlTaO_x dielectrics

Yang

Huang

Chin

et al. 2003

IEEE Electron Device Lett.

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“…Simulations show that the on-resistance is 0.4 . The varactors are implemented using a MOS capacitors [12] and laid out using a differential architecture [13].…”

Section: B Vco Circuit Designmentioning

confidence: 99%

A 900-MHz 1.5-V CMOS voltage-controlled oscillator using switched resonators with a wide tuning range

2003

IEEE Microw. Wireless Compon. Lett.

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A 900-MHz fully integrated VCO was fabricated in a 0.18-m foundry CMOS process. Under 1.5 V power supply, this VCO can be tuned from 667 MHz to 1156 MHz which corresponds to a 53.6% tuning range. The VCO has nearly constant phase noise over the whole tuning frequency, credit to the switched resonators used in this VCO. The phase noise at a 600 kHz offset is 123.1 dBc/Hz at 1125 MHz center frequency and 124.2 dBc/Hz at 667 MHz center frequency. Index Terms-CMOS voltage-controlled oscillator, phase noise, switched resonators, tuning range.

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“…For some time, MOSFET capacitor behavior has been successfully exploited between strong inversion and depletion [6] [8][9][ 101. The differential structure is still available (Figure 2c), but the gain is limited because P+ diffusions have still to be inserted between devices, in order to provide enough minority carriers to create the channel.…”

Section: Inversion-mode Mosfetsmentioning

confidence: 99%

Design of high-Q varactors for low-power wireless applications using a standard CMOS process

Porret¹,

Melly²,

Enz³

Proceedings of the IEEE 1999 Custom Integrated Circuits Conference (Cat. No.99CH36327)

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The power consumption of an LC-tank oscillator is strongly affected by the varactor quality factor, whether the inductor is on-or off-chip. This paper proposes a new solution to realize high-Q, highly tunable on-chip varactors in a standard CMOS process, achieving a quality factor higher than 100 at 1 GHz, for a tuning ratio of 2. Other solutions are described and their respective advantages compared, while their characteristics are measured for a O S pm process.

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High-Q capacitors implemented in a CMOS process for low-power wireless applications

Cited by 94 publications

References 3 publications

High-density MIM capacitors using AlTaO_x dielectrics

High-density MIM capacitors using AlTaO_x dielectrics

A 900-MHz 1.5-V CMOS voltage-controlled oscillator using switched resonators with a wide tuning range

Design of high-Q varactors for low-power wireless applications using a standard CMOS process

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High-Q capacitors implemented in a CMOS process for low-power wireless applications

Cited by 94 publications

References 3 publications

High-density MIM capacitors using AlTaOx dielectrics

High-density MIM capacitors using AlTaOx dielectrics

A 900-MHz 1.5-V CMOS voltage-controlled oscillator using switched resonators with a wide tuning range

Design of high-Q varactors for low-power wireless applications using a standard CMOS process

Contact Info

Product

Resources

About

High-density MIM capacitors using AlTaO_x dielectrics

High-density MIM capacitors using AlTaO_x dielectrics