A 900-MHz 1.5-V CMOS voltage-controlled oscillator using switched resonators with a wide tuning range

Li, Zhenbiao; O, K.

doi:10.1109/lmwc.2003.811054

Cited by 28 publications

(1 citation statement)

References 16 publications

(9 reference statements)

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“…Finally, Table 3 compares the performance of our VCO with other published integrated VCOs (Herzel, Erzgraber, and Ilkov 2000;Tiebout 2002;Li and Kenneth 2003;Antoine et al 2005;Berny, Niknejad, and Meyer 2005;Sung, Lee, Baek, Kim, and Park 2005). It oscillates in the same band by means of a figure of merit (FoM) according to the following formula…”

Section: Measurement Resultsmentioning

confidence: 99%

Effect of separation and depth of N ⁺ diffusions in the quality factor and tuning range of PN varactors

Marrero-Martín

Szydzik

Garcı́a

et al. 2011

VLSI Circuits and Systems V

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This article presents a wide range inductance-capacitance voltage controlled oscillator (VCO) with a unit cells-based varactor. The unit cell represents the minimum possible integrated varactor based on p-n junction diodes, where N þ diffusions are central rectangles, surrounded by doughnut shaped P þ diffusions, with their respective contacts. The varactors are designed using the AMS 0.35 mm BiCMOS process. A physical model has been derived from the measurement of a set of eight fabricated varactors. Measurements indicate that the VCO, which is intended to be used in DVB-H, oscillates from 1.087 to 2.032 GHz, with a 61% tuning range. The phase noises of À124 dBc/Hz at 1 MHz offset and À108 dBc/Hz at 100 kHz offset are obtained.

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Section: Measurement Resultsmentioning

confidence: 99%

Effect of separation and depth of N ⁺ diffusions in the quality factor and tuning range of PN varactors

Marrero-Martín

Szydzik

Garcı́a

et al. 2011

VLSI Circuits and Systems V

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Poststress RF-drifts of dual-band LC VCO in 0.18-μm CMOS technology

Jain

Jang

Juang

2013

Int J RF and Microwave Comp Aid Eng

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This article studies the RF-property of a dual-band voltage-controlled oscillator (VCO). The designed circuit consists of a dual-resonance LC resonator and a Colpitts negative resistance cell. The dual-resonance LC resonator comprises a series-tuned LC resonator and a parallel resonant resonator. The proposed VCO has been implemented with the TSMC 0.18 lm 1P6M CMOS technology. The VCO can generate differential signals in the frequency range of 3.0-3.37 GHz and 6.95-7.40 GHz with core power consumption of 10.08 and 10.24 mW at the dc drain-source bias V DD of 1.4 V, respectively. The die area of the dual-band VCO is 0.485 3 0.800 mm 2 . The circuit was operated at V DD 5 3 V for 8 h and significant drift in RF parameters was found. V C 2013 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:243-248, 2014.

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CMOS switched resonator frequency divider tuned by the switch gate bias

Jang

Tsai

Lee

2007

Micro & Optical Tech Letters

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GHz. The P 1dB and IIP3 are better than Ϫ14 dBm and Ϫ2.5 dBm under power consumption of 15 mW from 2.5-V supply voltage. Besides, this UWB mixer achieves a better FOM when considering the conversion gain, bandwidth, and power consumption. A 2-GHz merged CMOS LNA and mixer for WCDMA, VLSI Circuit Technol Symp Dig (2001) 19-22. 3. M.-D. Tsai and H. Wang, A 0.3-25-GHz ultra-wideband mixer using commercial 0.18-m CMOS technology, IEEE Microwave Wireless Compon Lett 14 (2004), 522-524. 4. A.Q. Stafarian, A. Yazdi, and P. Heydari, Design and analysis of an ultrawide-band distributed CMOS mixer, IEEE Trans Very Large Scale Integr (VLSI) Syst 13 (2005), 618-629. ABSTRACT: A switched resonator injection-locked frequency divider (ILFD) designed and fabricated using a standard 0.18-m CMOS process is presented. The designed ILFD consists of double cross-coupled MOS switching pairs that use the current reuse technique to save power dissipation, and a switched LC resonator. The latter is composed of an inductor, a capacitor, and an inductor-MOS-inductor composite in parallel. The gate bias of MOSFET in the switched resonator is used to tune the free running ILFD frequency and extend the locking range of the ILFD. Measurement results show that at the supply voltage of 1.8 V, the divider free-running frequency is from 3.8 to 4.5 GHz, and at the incident power of 0 dBm the locking range is from the incident frequency of 7.6 to 9.26 GHz. Key words: injection-locked frequency divider; switched resonator; locking range; CMOS 5. M. Tiebout, A CMOS direct injection-locked oscillator topology as high-frequency low-power frequency divider, IEEE J Solid-State Cir-ABSTRACT: A novel tunable coherence-free microwave photonic filter configuration is presented. This all-optical structure realizes negative taps and works as a bandpass notch filter. The configuration is based on a Sagnac loop interferometer containing a single-drive intensity modulator and a polarization-maintaining semiconductor optical amplifier that generates phase difference between the clockwise and counterclockwise propagating waves inside the Sagnac loop. Measured results demonstrate a robust tunable bandpass notch response.

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A 900-MHz 1.5-V CMOS voltage-controlled oscillator using switched resonators with a wide tuning range

Cited by 28 publications

References 16 publications

Effect of separation and depth of N ⁺ diffusions in the quality factor and tuning range of PN varactors

Effect of separation and depth of N ⁺ diffusions in the quality factor and tuning range of PN varactors

Poststress RF-drifts of dual-band LC VCO in 0.18-μm CMOS technology

CMOS switched resonator frequency divider tuned by the switch gate bias

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A 900-MHz 1.5-V CMOS voltage-controlled oscillator using switched resonators with a wide tuning range

Cited by 28 publications

References 16 publications

Effect of separation and depth of N + diffusions in the quality factor and tuning range of PN varactors

Effect of separation and depth of N + diffusions in the quality factor and tuning range of PN varactors

Poststress RF-drifts of dual-band LC VCO in 0.18-μm CMOS technology

CMOS switched resonator frequency divider tuned by the switch gate bias

Contact Info

Product

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Effect of separation and depth of N ⁺ diffusions in the quality factor and tuning range of PN varactors

Effect of separation and depth of N ⁺ diffusions in the quality factor and tuning range of PN varactors