CMOS switched resonator frequency divider tuned by the switch gate bias

Abstract

GHz. The P 1dB and IIP3 are better than Ϫ14 dBm and Ϫ2.5 dBm under power consumption of 15 mW from 2.5-V supply voltage. Besides, this UWB mixer achieves a better FOM when considering the conversion gain, bandwidth, and power consumption. A 2-GHz merged CMOS LNA and mixer for WCDMA, VLSI Circuit Technol Symp Dig (2001) 19-22. 3. M.-D. Tsai and H. Wang, A 0.3-25-GHz ultra-wideband mixer using commercial 0.18-m CMOS technology, IEEE Microwave Wireless Compon Lett 14 (2004), 522-524. 4. A.Q. Stafarian, A. Yazdi, and P. Heydari, Design and analysis of an ultrawide-band distributed CMOS mixer, IEEE Trans Very Large Scale Integr (VLSI) Syst 13 (2005), 618-629. ABSTRACT: A switched resonator injection-locked frequency divider (ILFD) designed and fabricated using a standard 0.18-m CMOS process is presented. The designed ILFD consists of double cross-coupled MOS switching pairs that use the current reuse technique to save power dissipation, and a switched LC resonator. The latter is composed of an inductor, a capacitor, and an inductor-MOS-inductor composite in parallel. The gate bias of MOSFET in the switched resonator is used to tune the free running ILFD frequency and extend the locking range of the ILFD. Measurement results show that at the supply voltage of 1.8 V, the divider free-running frequency is from 3.8 to 4.5 GHz, and at the incident power of 0 dBm the locking range is from the incident frequency of 7.6 to 9.26 GHz. Key words: injection-locked frequency divider; switched resonator; locking range; CMOS 5. M. Tiebout, A CMOS direct injection-locked oscillator topology as high-frequency low-power frequency divider, IEEE J Solid-State Cir-ABSTRACT: A novel tunable coherence-free microwave photonic filter configuration is presented. This all-optical structure realizes negative taps and works as a bandpass notch filter. The configuration is based on a Sagnac loop interferometer containing a single-drive intensity modulator and a polarization-maintaining semiconductor optical amplifier that generates phase difference between the clockwise and counterclockwise propagating waves inside the Sagnac loop. Measured results demonstrate a robust tunable bandpass notch response.

A low-voltage, low power divide-by-4 LC-tank injection-locked frequency divider

“…However, as the supply voltage decreases, both the voltage swing and the drain-source voltage of injection MOSFET decrease, which reduces the locking range. The locking range of a conventional ILFD can be increased by degrading the LC-tank quality factor through optimal sizing and biasing of the injection MOSFET, and using an inductor peaking technique (Wu and Hajimiri 2001;Jang, Tsai, and Lee 2008) but power consumption remains an issue. In this article, an ILFD operating at the supply voltage of 0.67 V and with a large locking range is proposed.…”

Wide‐locking range divide‐by‐4 injection‐locked frequency divider using injection MOSFET DC‐biased above threshold region

“…In order to obtain wide-locking range, the approach with two ÷2 ILFDs [10,11] uses an LC divide-by-2 ILFD and a ring ILFD, and it may suffer from misalignment of frequencies. The second method uses inductive peaking [6,13,14] to enhance the nonlinear mixing; it still has property of narrow locking range. The second method uses inductive peaking [6,13,14] to enhance the nonlinear mixing; it still has property of narrow locking range.…”