High Purity Germanium - Low Temperature Hall Analyses

Wichner, R.; Swierkowski, S. P.; Armantrout, G.A.

doi:10.1109/tns.1974.4327471

Cited by 10 publications

(3 citation statements)

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“…In order to determine the purity level of the zonerefined ingots, we generally cut three slices; one from the head, one from the middle, and the other from the tail of the zone-refined ingot, as shown in figure 2. Each slice was further cut into square samples, the samples were then polished and cleaned and In/Ga eutectic contacts were attached to the four corners of the samples so that the van der Pauw Hall Effect measurement could be properly taken [8][9][10]. The van der Pauw Hall measurement was conducted using a Hall measurement system (Ecopia HMS-3000 with a 0.55 T permanent magnet, Korea.)…”

Section: Methodsmentioning

confidence: 99%

Investigation of influential factors on the purification of zone‐refined germanium ingot

Yang

Govani

Mei

et al. 2014

Crystal Research and Technology

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Zone refining is one of the most important procedures to purify germanium crystals for the fabrication of detectors in our laboratory. In order to properly zone refine highpurity germanium crystals, it is important to develop perfect cleaning procedures for raw materials, quartz tubes, and the containers holding raw materials. Additionally, vacuum levels, container types, the correct combination of ambient gases, the speed of zone travel, and the ratio of ingot length to molten zone length, all need to be carefully studied in order to obtain the best results possible. In this work, we investigate a number of influential factors in perfecting high-purity germanium crystal growth, specifically: cleaning procedures, boat composition, vacuum levels in the chamber, zone travel speed, and the ratio of ingot length to molten zone length. Using the van der Pauw Hall technique, we were able to measure the electrical properties of zone-refined ingots and analyze the origin and distribution of three main impurity elements (boron, aluminum and phosphorus) thereby allowing us to study potential contamination sources. After detailed analysis on the various influential factors, we were able to optimize the zone-refining procedures.

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Section: Methodsmentioning

confidence: 99%

Investigation of influential factors on the purification of zone‐refined germanium ingot

Yang

Govani

Mei

et al. 2014

Crystal Research and Technology

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“…In diode S24-7.7 (Fig. 5) all copper and oxygen related peaks (1)(2)(3)(4) are clearly visible. Two further peaks 5-and 6 have not been identifed.…”

Section: Resultsmentioning

confidence: 95%

Deep Level Transient Spectroscopy of High-Purity Germanium Diodes/Detectors

Häller¹,

Li²,

Hubbard³

et al. 1979

IEEE Trans. Nucl. Sci.

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Deep Level Transient Spectroscopy (DLTS) 5 has been applied for the first time to high-purity germanium p-i-n diodes. Using the correlator technique, 6 a large number of peaks due to acceptor levels in the forbidden band have been observed. The levels due to substitutional copper, to copper-hydrogen complexes and to divacancy-hydrogen defects have been positively identified. Several unknown levels have been discovered. The results obtained with DLTS are in excellent agreement with results from Hall-effect measurements. DLTS is the perfect tool to follow the creation and annealing of radiation defects.

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“…Hall-effective measurement is one of the most popular ways to evaluate carrier concentration and mobility of charge carriers in semiconductors. In particular, Hall-effect measurements using the Van der Pauw geometry have been used to evaluate the electrical transport properties of semiconductors [3][4][5].…”

Section: Introductionmentioning

confidence: 99%