Radial and axial impurity distribution in high-purity germanium crystals

Yang, Gang; Wang, Guojian; Xiang, Wenchang; Guan, Yutong; Sun, Yazhou; Mei, Dongming; Gray, Bruce; Chan, Y. D.

doi:10.1016/j.jcrysgro.2011.12.042

Cited by 12 publications

(11 citation statements)

References 5 publications

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“…Zone refining of commercially available Ge ingots is a prerequisite for growing detector-grade single crystals. We have developed zone-refining methods [54][55][56] that advance approaches to reducing impurity level from a commercially-achievable level of ∼(1-3)×10 14 /cm 3 to a level of ∼10 10 /cm 3 , which is needed to grow crystals without doping for novel detectors. The dominant impurities in Ge ingots are B, Al, Ga, P, and Al monoxide (AlO).…”

Section: Development Of a Detector With Internal Amplification Of Cha...mentioning

confidence: 99%

Direct detection of MeV-scale dark matter utilizing germanium internal amplification for the charge created by the ionization of impurities

et al. 2018

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Light, MeV-scale dark matter (DM) is an exciting DM candidate that is undetectable by current experiments. A germanium (Ge) detector utilizing internal charge amplification for the charge carriers created by the ionization of impurities is a promising new technology with experimental sensitivity for detecting MeV-scale DM. We analyze the physics mechanisms of the signal formation, charge creation, charge internal amplification, and the projected sensitivity for directly detecting MeV-scale DM particles. We present a design for a novel Ge detector at helium temperature (∼ 4 K) enabling ionization of impurities from DM impacts. With large localized E-fields, the ionized excitations can be accelerated to kinetic energies larger than the Ge bandgap at which point they can create additional electron-hole pairs, producing intrinsic amplification to achieve an ultra-low energy threshold of ∼ 0.1 eV for detecting low-mass DM particles in the MeV scale. Correspondingly, such a Ge detector with 1 kg-year exposure will have high sensitivity to a DM-nucleon cross section of ∼ 5 × 10 −45 cm 2 at a DM mass of ∼ 10 MeV/c 2 and a DM-electron cross section of ∼ 5 × 10 −46 cm 2 at a DM mass of ∼ 1 MeV/c 2 .

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Section: Development Of a Detector With Internal Amplification Of Cha...mentioning

confidence: 99%

Direct detection of MeV-scale dark matter utilizing germanium internal amplification for the charge created by the ionization of impurities

et al. 2018

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“…Germanium (Ge) is a group IV indirect semiconductor like Si, but with a smaller bandgap of 0.66 eV and higher carrier mobilities at low temperature, which make it more attractive than Si for optoelectronic applications (Dalven, 1966;Debye and Conwell, 1954). It is worth noting here that relatively low-purity Ge (LPGe) crystals have so far been used in wave guide, infrared (IR) window fiber optics, IR night vision devices, space solar cells and as polymerization catalyst (Wada and Kimerling, 2015), whereas the HPGe crystals have the applications in the fabrication of nuclear and gamma ray detectors (Hansen and Haller, 1981;Haller et al, 1979Haller et al, , 1972Eberth and Simpson, 2008;Yang et al, 2012). However, a very few works have been performed on Ge as a solar cell (Sorianello et al, 2013).…”

Section: Introductionmentioning

confidence: 99%

Design guidelines for a highly efficient high-purity germanium (HPGe)-based double-heterojunction solar cell

Hossain

Moon

Mondal

et al. 2021

Optics & Laser Technology

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“…Several germanium samples, obtained from a n-type detector-grade crystal grown in our lab at the University of South Dakota [28][29][30][31][32][33][34][35] with measured average Hall mobility µ H larger than 30000 cm 2 /(V•s), are used for our investigation in this work. Based on IEEE Standard, the relationship between the measured Hall mobility µ H and the total charge drift mobility µ is defined as:…”

Section: Resultsmentioning

confidence: 99%

The impact of neutral impurity concentration on charge drift mobility in n-type germanium

et al. 2017

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A: The impact of neutral impurity scattering of electrons on the charge drift mobility in high purity n-type germanium crystals at 77 Kelvin is investigated. We calculated the contributions from ionized impurity scattering, lattice scattering, and neutral impurity scattering to the total charge drift mobility using theoretical models. The experimental data such as charge carrier concentration, mobility and resistivity are measured by Hall Effect system at 77 Kelvin. The neutral impurity concentration is derived from the Matthiessen's rule using the measured Hall mobility and ionized impurity concentration. The radial distribution of the neutral impurity concentration in the selfgrown crystals is determined. Consequently, we demonstrated that neutral impurity scattering is a significant contribution to the charge drift mobility, which has a dependence on the concentration of neutral impurities in high purity n-type germanium crystal.

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Radial and axial impurity distribution in high-purity germanium crystals

Cited by 12 publications

References 5 publications

Direct detection of MeV-scale dark matter utilizing germanium internal amplification for the charge created by the ionization of impurities

Direct detection of MeV-scale dark matter utilizing germanium internal amplification for the charge created by the ionization of impurities

Design guidelines for a highly efficient high-purity germanium (HPGe)-based double-heterojunction solar cell

The impact of neutral impurity concentration on charge drift mobility in n-type germanium

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