Several high-resolution HgI2 x-ray detectors have been made from single crystals grown from the vapor phase. Hole and electron transport properties and detector electrical characteristics are described. Measured mobility-lifetime product for electrons is 8×10−5 cm2/V with a μe of 3 cm2/V sec. The mean energy per electron-hole pair is 4.33 eV at 122 keV. Detectors up to 1 mm3 are described, and a resolution as low as 850 eV at 300 °K in air has been obtained for 5.9-keV x rays, which suggests possible x-ray flourescence detection applications.
Experimental and theoretical investigations of the Hall effect were carried out in high-purity (1010-cm−3 carrier concentration) germanium crystals. Optical phonon scattering, which was not included in the previous work on the calculation of the Hall coefficient factor θ̂, is included in the present calculation. Extensive numerical calculations were performed for θ̂ vs 1/T for both the spherical-band model and the anisotropic model of Beer and Willardson. Measurements and calculations of the Hall coefficient vs 1/T are in excellent agreement.
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