High power silicon RF LDMOSFET technology for 2.1 GHz power amplifier applications

Xu, Shuming; Baiocchi, F. A.; Safar, H.; Lott, H.; Shibib, Ayman; Xie, Zhijian; Nigam, T.; Jones, Brian K.; Thompson, B.; Desko, J.C.; Gammel, P. L.

doi:10.1049/ip-cds:20040455

Cited by 11 publications

(2 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The C ov value basically depends on the extension of the N drift under the polysilicon gate and the gate oxide thickness (T ox ). The C j value depends on the N dr doping concentration and the P body/N drift junction depth [12].…”

Section: Analysis Of Tgldmos Dynamic Characteristicsmentioning

confidence: 99%

The thin SOI TGLDMOS transistor: a suitable power structure for low voltage applications

Cortés¹,

Fernández-Martínez²,

Flores³

et al. 2007

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This paper is addressed to the analysis of the trench gate LDMOS transistor (TGLDMOS) in a thin SOI technology and to investigate its suitability for low voltage power applications. The static and dynamic performances have been extensively analyzed by means of numerical simulations and compared with a conventional thin SOI power LDMOS transistor. The specific on-state resistance of the analyzed TGLDMOS structure is lower than that of the LDMOS counterpart, but the structure design has to be optimized to minimize the added contributions to the parasitic capacitances. In this sense, a modified TGLDMOS is also proposed to reduce the gate-drain capacitance and to increase the frequency capability. The expected electrical performance improvements of both TGLDMOS and modified TGLDMOS power transistors corroborate their suitability for 80 V switching and amplifying applications.

show abstract

Section: Analysis Of Tgldmos Dynamic Characteristicsmentioning

confidence: 99%

The thin SOI TGLDMOS transistor: a suitable power structure for low voltage applications

Cortés¹,

Fernández-Martínez²,

Flores³

et al. 2007

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Bulk-silicon vertical double-diffused MOSFETs (VDMOSFETs) have excellent linearity, but suffer from limited high-frequency gain due to a large gate-drain capacitance and source lead inductance to ground. To reach higher RF power gain while maintaining good linearity, laterally diffused MOSFETs (LDMOSFETs) were developed [1], [2] and have become the state-of-the-art silicon devices for highly linear RF power applications [3], [4].…”

mentioning

confidence: 99%