The thin SOI TGLDMOS transistor: a suitable power structure for low voltage applications

Cortés, I.; Fernández-Martínez, P.; Flores, D.; Hidalgo, S.; Rebollo, J.

doi:10.1088/0268-1242/22/10/018

Cited by 14 publications

(11 citation statements)

References 11 publications

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“…[10] On the basis of the trench technology, a trench gate is integrated in the oxide trench to obtain a reduced R on,sp . [11][12][13][14] Based on the authors' investigation of high-voltage trench lateral MOSFETs, [15] a novel high-voltage SOI lateral trench MOSFET (DFPT MOSFET) with dual vertical field plate (VFP) is proposed and investigated. In the proposed structure, two VFPs are integrated in the oxide trench and form a dual VFP.…”

Section: Introductionmentioning

confidence: 99%

High-voltage SOI lateral MOSFET with a dual vertical field plate

Fan¹,

Zhang²,

Luo³

et al. 2013

Chinese Phys. B

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A new silicon-on-insulator (SOI) power lateral MOSFET with a dual vertical field plate (VFP) in the oxide trench is proposed. The dual VFP modulates the distribution of the electric field in the drift region, which enhances the internal field of the drift region and increases the drift doping concentration of the drift region, resulting in remarkable improvements in breakdown voltage (BV) and specific on-resistance (R on,sp ). The mechanism of the VFP is analyzed and the characteristics of BV and R on,sp are discussed. It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V, and the R on,sp decreases from 366 mΩ•cm 2 to 110 mΩ•cm 2 .

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Section: Introductionmentioning

confidence: 99%

High-voltage SOI lateral MOSFET with a dual vertical field plate

Fan¹,

Zhang²,

Luo³

et al. 2013

Chinese Phys. B

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“…Trench gate MOSFETs are popular in various medium to low voltage power applications like automotive electronics, microprocessor power supplies, DC-DC converters and control switching due to their reduced conduction power losses and forward voltage drop [1][2][3][4][5][6][7][8][9][10][11][12][13]. However, simultaneously achieving the other important features of a power device e.g.…”

Section: Introductionmentioning

confidence: 99%

“…Similarly, any attempt to increase the breakdown voltage causes a drastic increase in the ON-resistance [14,15]. Structural modifications are often required to overcome these limitations and optimize the device performance [1][2][3][4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance

Saxena

Kumar

2009

IEEE Trans. Electron Devices

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In this brief, we propose a new stepped oxide heteromaterial trench power MOSFET with three sections in the trench gate (an N + poly gate sandwiched between two P + poly gates) and having different gate oxide thicknesses (increasing from source side to drain side). The different gate oxide thickness serves the purpose of simultaneously achieving the following: 1) a good gate control on the channel charge and 2) a lesser gate-to-drain capacitance. As a result, we obtain higher transconductance as well as reduced switching delays, making the proposed device suitable for both RF amplification and high-speed switching applications. In addition, the sandwiched gate with different work-function gate materials modifies the electric field profile in the channel, resulting in an improved breakdown voltage. By using 2-D simulations, we have shown that the proposed device structure exhibits about 32% enhancement in breakdown voltage, 25% reduction in switching delays, 20% enhancement in peak transconductance, and 10% reduction in figure of merit (product of ON-resistance and gate charge) as compared to the conventional trench-gate MOSFET.

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“…A trench gate MOSFET [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] is the most preferred power device for medium to low voltage power applications. These are used extensively in control switching, DC-DC converters, automotive electronics, microprocessor power supplies etc.…”

Section: Introductionmentioning

confidence: 99%

A New Strained-Silicon Channel Trench-Gate Power MOSFET: Design and Analysis

Saxena

Kumar

2008

IEEE Trans. Electron Devices

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In this paper, we propose a new trench power MOSFET with strained Si channel that provides lower on resistance than the conventional trench MOSFET. Using a 20% Ge mole fraction in the Si 1-x Ge x body with a compositionally graded Si 1-x Ge x buffer in the drift region enables us to create strain in the channel along with graded strain in the accumulation region. As a result, the proposed structure exhibits 40% enhancement in current drivability, 28% reduction in the on-resistance and 72% improvement in peak transconductance at the cost of only 12% reduction in the breakdown voltage when compared to the conventional trench gate MOSFET. Furthermore, the graded strained accumulation region supports the confinement of carriers near the trench sidewalls improving the field distribution in the mesa structure useful for a better damage immunity during inductive switching.

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The thin SOI TGLDMOS transistor: a suitable power structure for low voltage applications

Cited by 14 publications

References 11 publications

High-voltage SOI lateral MOSFET with a dual vertical field plate

High-voltage SOI lateral MOSFET with a dual vertical field plate

A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance

A New Strained-Silicon Channel Trench-Gate Power MOSFET: Design and Analysis

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