High-power operation of a wide-striped InGaN laser diode array

Diode lasers: From laboratory to industry

“…Samsøe et al [61] studied the continuous wave (CW) red light at 635 nm emerged from extended cavity system based on a broad area laser (BAL) diode for a color laser display and found that new red source setup was suitable for display applications. Recently, with the successful demonstration of high power multi-striped InGaN-based LD array of 6.3 W, Samonji et al [62] suggested that the new applications like projection displays and laser annealing are possible with these laser diodes.…”

Impact of Heat Spreaders on Thermal Performance of III-N-Based Laser Diode

“…Reported values for the thermal resistance of III-N-based single-emitter RW EELs range from 10-60 K/W [4], [5].…”

A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe

“…It can be seen that the structures of broad-area stripe and laser diode array effectively increase the output power of the device. Compared to the previously reported highest output power value of 6.3 W of an InGaN laser diode array under continuous operation by Panasonic Corporation, [9] our device of laser diode array is designed in a conventional way, without detailed thermal optimization, and thus can only be operated under pulsed current injection. Taking advantage of broad-area stripes, the layout design of the device can be further thermally optimized.…”

“…Broad-area stripes are candidates for laser diodes with high power because of their higher level of the catastrophic optical damage (COD) on the front laser facet. [9] In our laser chip, the width of each stripe emitter is 20 µm and the interval between every two stripes is 10 µm. The width of p-type electrodes on each stripe is 16 µm.…”