This paper explores the effect on optical output power of modifications to the package assembly of a blue-violet III-N-based p-down edge-emitting ridge-waveguide laser diode grown on bulk GaN crystal. The calculations were carried out using a 3-D self-consistent finite-element model. We focus on thermal analyses of the size and thermal conductivity of the heat spreader (mainly made of natural diamond and chemical vapor deposition diamond) and on the thickness of the solder. The results open the possibility for multiple increases in output power, due to a considerable increase in the power conversion efficiency of the laser diode.Index Terms-Computer aided analysis, semiconductor device packaging, semiconductor lasers.
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