High power IGBT modules: thermal fatigue resistance evaluation of the solder joints

Thebaud, J.-M.; Woirgard, Eric; Zardini, Christian; Sommer, K.

doi:10.1109/iwipp.2000.885186

Cited by 11 publications

(5 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Implementation of electrical sensors is already necessary to provide accurate control of a converter, and is one reason why CM research has extensively focused methods without the requirement for dedicated sensors inside the power device. Several investigations exist on the use of on-state voltage drop (or on-resistance) to monitor bond wire degradation and ultimately lift-off [9]- [13]; evaluation of switching parameters has been suggested for identification of several failure mechanisms [14]- [16] in IGBTs, along with gate voltage [17]; and attempts have also been made to determine the change in a device's internal thermal resistance primarily to indicate solder degradation [4] [18] [19].…”

Section: Model-based Cm: the Response Of The System Is Compared To A mentioning

confidence: 99%

Improved Reliability of Power Modules: A Review of Online Junction Temperature Measurement Methods

Baker

Liserre

Dupont

et al. 2014

EEE Ind. Electron. Mag.

187

View full text Add to dashboard Cite

Section: Model-based Cm: the Response Of The System Is Compared To A mentioning

confidence: 99%

Improved Reliability of Power Modules: A Review of Online Junction Temperature Measurement Methods

Baker

Liserre

Dupont

et al. 2014

EEE Ind. Electron. Mag.

187

View full text Add to dashboard Cite

“…The majority of research has focused on monitoring an electrical parameter that indicates degradation. Examples of the most commonly monitored parameters are: the forward voltage in IGBTs (or the on-state resistance in MOSFETs) [9][10][11] and the evolution of a module's thermal resistance (R th ) [12][13][14][15][16]. These parameters have been studied since the 1990s.…”

Section: Background: Reliability and Condition Monitoring Of Power Sementioning

confidence: 99%

Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

2017

View full text Add to dashboard Cite

Abstract:In fast switching power semiconductors, the use of a fourth terminal to provide the reference potential for the gate signal-known as a kelvin-source terminal-is becoming common. The introduction of this terminal presents opportunities for condition monitoring systems. This article demonstrates how the voltage between the kelvin-source and power-source can be used to specifically monitor bond-wire degradation. Meanwhile, the drain to kelvin-source voltage can be monitored to track defects in the semiconductor die or gate driver. Through an accelerated aging test on 20 A Silicon Carbide Metal-Oxide-Semiconductor-Field-Effect Transistors (MOSFETs), it is shown that there are opposing trends in the evolution of the on-state resistances of both the bond-wires and the MOSFET die. In summary, after 50,000 temperature cycles, the resistance of the bond-wires increased by up to 2 mΩ, while the on-state resistance of the MOSFET dies decreased by approximately 1 mΩ. The conventional failure precursor (monitoring a single forward voltage) cannot distinguish between semiconductor die or bond-wire degradation. Therefore, the ability to monitor both these parameters due to the presence of an auxiliary-source terminal can provide more detailed information regarding the aging process of a device.

show abstract

“…On the other hand, data-driven approaches start with accelerating aging tests followed with preprocessing (filtering) and classification for eliminating noise from collected data and recognising life durations of component/system to health states wherever meaningful changes get observed from the collected data. There are various techniques to accelerate aging processes under different working/operational conditions, such as thermal cycling, power cycling, and electro-thermal cycling [17] [18]. It is worth mentioning that there is also an important initial step which involves investigating what signals should be monitored to allow prognostics to be successfully developed based on their features extracted from those signals.…”

Section: A Technichal Approachesmentioning

confidence: 99%

Developing Prognostic Models Using Duality Principles for DC-to-DC Converters

Samie

Perinpanayagam

Alghassi

et al. 2015

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

Abstract-Within the field of Integrated SystemHealth management, there is still a lack of technological approaches suitable for the creation of adequate prognostic model for large applications whereby a number of similar or even identical subsystems and components are used. Existing similarity among a number of different systems, which are comprised of similar components but with different topologies, can be employed to assign the prognostics of one system to other systems using an inference engine. In the process of developing prognostics, this approach will thereby save resources and time. This paper presents a radically novel approach for building prognostic models based on system similarity in cases where duality principle in electrical systems is utilized. In this regard, unified damage model is created based on standard Tee/Pi models, prognostics model based on transfer functions, and RUL estimator based on how energy relaxation time of system is changed due to degradation. An advantage is; the prognostic model can be generalized such that a new system could be developed on the basis and principles of the prognostic model of other systems. Simple electronic circuits, DC-to-DC converters, are to be used as an experiment to exemplify the potential success of the proposed technique validated with prognostics models from particle filter.

show abstract

High power IGBT modules: thermal fatigue resistance evaluation of the solder joints

Cited by 11 publications

References 3 publications

Improved Reliability of Power Modules: A Review of Online Junction Temperature Measurement Methods

Improved Reliability of Power Modules: A Review of Online Junction Temperature Measurement Methods

Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs

Developing Prognostic Models Using Duality Principles for DC-to-DC Converters

Contact Info

Product

Resources

About