High-power high-efficiency superluminescent diodes with J-shaped ridge waveguide structure

Liang, Ji Hao; Maruyama, T.; Ogawa, Y.; Kobayashi, Seiichiro; Sonoda, Junichi; Urae, H.; Tomita, Shogo; Tomioka, Y.; Kon, Shozo; Nakano, Yoshiaki

doi:10.1109/iciprm.2002.1014143

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

DOI: 10.1109/iciprm.2002.1014143

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High-power high-efficiency superluminescent diodes with J-shaped ridge waveguide structure

Ji Hao Liang

T. Maruyama

Y. Ogawa

et al.

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Cited by 4 publications

(2 citation statements)

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“…This curved RWG structure enables a double-pass of light in the cavity. [10][11][12] In Fig. 2, the power-current-voltage (P-I-V ) characteristics of the two studied diodes are presented.…”

mentioning

confidence: 99%

Cyan Superluminescent Light-Emitting Diode Based on InGaN Quantum Wells

Kopp¹,

Lermer²,

Eichler³

et al. 2012

Appl. Phys. Express

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An InGaN superluminescent light-emitting diode (SLED) with emission as long as 500 nm is presented. Up to now, an SLED with such a long wavelength was hindered, because the gain of indium-rich layers was not sufficient for operating in superluminescence mode. We used an epitaxial structure with high material gain as well as a special chip design of curved waveguide to solve this problem. The SLED reached an output power of >4 mW with a spectral bandwidth of 4.4 nm driven in pulsed mode.

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“…This curved RWG structure enables a double-pass of light in the cavity. [10][11][12] In Fig. 2, the power-current-voltage (P-I-V ) characteristics of the two studied diodes are presented.…”

mentioning

confidence: 99%

Cyan Superluminescent Light-Emitting Diode Based on InGaN Quantum Wells

Kopp¹,

Lermer²,

Eichler³

et al. 2012

Appl. Phys. Express

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“…In general, cavity feedback suppression in SLDs is achieved by reducing the reflectivity of both 19 or one facet. 23 The most common approaches to prevent lasing inside the cavity are using ultralow reflectivity antireflection (AR) coatings, 24 adding a highly active 25 or a passive absorber 26 section into the resonator, or tilting the waveguide with respect to the cavity facets. 19 An AR-coating can only decrease the reflectivity to 10 À4 at a single wavelength; a multilayer AR-coating can reduce reflectivity over a relatively broad wavelength range, but the fabrication of multilayer AR-coatings makes the process difficult.…”

mentioning

confidence: 99%

GaSb superluminescent diodes with broadband emission at 2.55 μm

Zia

Viheriälä

Koivusalo

et al. 2018

Applied Physics Letters

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We report the development of superluminescent diodes (SLDs) emitting mW-level output power in a broad spectrum centered at a wavelength of 2.55 μm. The emitting structure consists of two compressively strained GaInAsSb/GaSb-quantum wells placed within a lattice-matched AlGaAsSb waveguide. An average output power of more than 3 mW and a peak power of 38 mW are demonstrated at room temperature under pulsed operation. A cavity suppression element is used to prevent lasing at high current injection allowing emission in a broad spectrum with a full width at half maximum (FWHM) of 124 nm. The measured far-field of the SLD confirms a good beam quality at different currents. These devices open further development possibilities in the field of spectroscopy, enabling, for example, detection of complex molecules and mixtures of gases that manifest a complex absorption spectrum over a broad spectral range.

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Design and realization of high-power ripple-free superluminescent diodes at 1300 nm

Schweizer

Zhang

et al. 2004

IEEE J. Quantum Electron.

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High-power high-efficiency superluminescent diodes with J-shaped ridge waveguide structure

Cited by 4 publications

References 6 publications

Cyan Superluminescent Light-Emitting Diode Based on InGaN Quantum Wells

Cyan Superluminescent Light-Emitting Diode Based on InGaN Quantum Wells

GaSb superluminescent diodes with broadband emission at 2.55 μm

Design and realization of high-power ripple-free superluminescent diodes at 1300 nm

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