High-power high-brightness semiconductor lasers based on novel waveguide concepts

Bimberg, D.; Posilovic, K.; Kalosha, V. P.; Kettler, T.; Seidlitz, Daniel; Shchukin, V. A.; Ledentsov, N. N.; Gordeev, N. Yu.; Karachinsky, L. Ya.; Novikov, I. I.; Maximov, M. V.; Shernyakov, Yuri M.; Chunareva, A. V.; Bugge, F.; Weyers, M.

doi:10.1117/12.846577

Cited by 22 publications

(18 citation statements)

References 25 publications

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“…This is very similar to the CW beam quality at a pump current of 3 A [10]. The high beam quality leads to an excellent peak brightness of the pulsed laser source of 4 × 10 8 Wsr 21 cm 22 .…”

supporting

confidence: 50%

“…A maximum output power of 2.2 W was achieved, limited by thermal rollover. The lateral beam quality was better than M 2 ¼ 2.25 (second moments) at all pump currents [10].…”

mentioning

confidence: 98%

“…At 980 nm, ridge waveguide lasers have been fabricated with almost circular far fields and a low vertical beam divergence of 58. The large mode area reduces facet load, allowing high optical output powers of up to 2.2 W under continuous-wave (CW) operation in a single transverse mode [10].…”

mentioning

confidence: 99%

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10.7 W peak power picosecond pulses from high-brightness photonic band crystal laser diode

et al. 2010

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confidence: 50%

“…A maximum output power of 2.2 W was achieved, limited by thermal rollover. The lateral beam quality was better than M 2 ¼ 2.25 (second moments) at all pump currents [10].…”

mentioning

confidence: 98%

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10.7 W peak power picosecond pulses from high-brightness photonic band crystal laser diode

et al. 2010

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“…Various techniques can be used to compensate for this, for example by coupling to additional vertical waveguides or by using optical trap layers (see Refs. [28][29][30] and references within). However, these approaches add complexity, increase overall thickness and add hetero-junctions, typically degrading η E .…”

Section: Design Approach For Simultaneous High Efficiency and Narrow mentioning

confidence: 95%

Low-loss smile-insensitive external frequency-stabilization of high power diode lasers enabled by vertical designs with extremely low divergence angle and high efficiency

et al. 2013

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Broad area lasers with narrow spectra are required for many pumping applications and for wavelength beam combination. Although monolithically stabilized lasers show high performance, some applications can only be addressed with external frequency stabilization, for example when very narrow spectra are required. When conventional diode lasers with vertical far field angle, Θ V 95% ~ 45° (95% power) are stabilized using volume holographic gratings (VHGs), optical losses are introduced, limiting both efficiency and reliable output power, with the presence of any bar smile compounding the challenge. Diode lasers with designs optimized for extremely low vertical divergence (ELOD lasers) directly address these challenges. The vertical far field angle in conventional laser designs is limited by the waveguiding of the active region itself. In ELOD designs, quantum barriers are used that have low refractive index, enabling the influence of the active region to be suppressed, leading to narrow far field operation from thin vertical structures, for minimal electrical resistance and maximum power conversion efficiency. We review the design process, and show that 975 nm diode lasers with 90 µm stripes that use ELOD designs operate with Θ V 95% = 26° and reach 58% power conversion efficiency at a CW output power of 10 W. We demonstrate directly that VHG stabilized ELOD lasers have significantly lower loss and larger operation windows than conventional lasers in the collimated feedback regimes, even in the presence of significant (≥ 1 µm) bar smile. We also discuss the potential influence of ELOD designs on reliable output power and options for further performance improvement.

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“…Since very poor package and measurement conditions are used, we suppose that a much higher CW output power can be achieved by using AuSn solder and improved mounting, 22 and higher pulse power by employing driving current source with short pulse width (<1 ls) and passivated facets. Both operations show a nearly same threshold current of about 1 A, and the slope efficiency under QCW test is 1.02 W/A.…”

mentioning

confidence: 99%

High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure

Liu

et al. 2014

Applied Physics Letters

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High-power high-brightness semiconductor lasers based on novel waveguide concepts

Cited by 22 publications

References 25 publications

10.7 W peak power picosecond pulses from high-brightness photonic band crystal laser diode

10.7 W peak power picosecond pulses from high-brightness photonic band crystal laser diode

Low-loss smile-insensitive external frequency-stabilization of high power diode lasers enabled by vertical designs with extremely low divergence angle and high efficiency

High-power narrow-vertical-divergence photonic band crystal laser diodes with optimized epitaxial structure

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