10.7 W peak power picosecond pulses from high-brightness photonic band crystal laser diode

Riecke, Sina; Posilovic, K.; Kettler, T.; Seidlitz, Daniel; Shchukin, V. A.; Ledentsov, N. N.; Lauritsen, Kristian; Bimberg, D.

doi:10.1049/el.2010.8909

Cited by 13 publications

(5 citation statements)

References 12 publications

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“…Experimentally, the characteristics close to those predicted were achieved with current pulses of an amplitude significantly lower than that used in previous work, though still greater than 10 A, due to the lasers used having a modest injection efficiency of about 0.5 [15]- [17]. Gain-switched laser designs with large d a /Γ a have also been demonstrated by other teams [18].…”

Section: Introductionsupporting

confidence: 78%

High-Energy Picosecond Pulse Generation by Gain Switching in Asymmetric Waveguide Structure Multiple Quantum Well Lasers

Huikari

Avrutin

Ryvkin

et al. 2015

IEEE J. Select. Topics Quantum Electron.

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A multiple quantum well laser diode utilizing an asymmetric waveguide structure with a large equivalent spot size of ∼3 μm is shown to give high energy (∼1 nJ) and short (∼100 ps) isolated optical pulses when injected with <10 A and ∼1-ns current pulses realized with a MOS driver. The active dimensions of the laser diode are 30 μm (stripe width) and 3 mm (cavity length), and it works in a single transversal mode at a wavelength of ∼0.8 μm. Detailed investigation of the laser behavior at elevated temperatures is conducted; it is shown that at high enough injection currents, lasers of the investigated type show low temperature sensitivity. Laser diodes of this type may find use in accurate and miniaturized laser radars utilizing single photon detection in the receiver.Index Terms-Semiconductor lasers, quantum well lasers, optical pulses, gain switching, laser radar.

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Section: Introductionsupporting

confidence: 78%

High-Energy Picosecond Pulse Generation by Gain Switching in Asymmetric Waveguide Structure Multiple Quantum Well Lasers

Huikari

Avrutin

Ryvkin

et al. 2015

IEEE J. Select. Topics Quantum Electron.

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“…Thus inexpensive and temperature stable QD lasers available between 1260 and 1310 nm are ideal future sources for road illumination and LIDAR. They can be based on novel HIBBEE high brightness laser structures being astigmatism-free and showing a round far field for as much as 4.2 W cw and 17.7 W pulsed output power at 1060 nm, needing no complex focusing optics [38][39][40]. The last generation of these lasers is based on QDs.…”

Section: High-frequency Directly Modulated Qd Lasersmentioning

confidence: 99%

Semiconductor nanostructures for flying q-bits and green photonics

Bimberg

2018

Nanophotonics

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Breakthroughs in nanomaterials and nanoscience enable the development of novel photonic devices and systems ranging from the automotive sector, quantum cryptography to metropolitan area and access networks. Geometrical architecture presents a design parameter of device properties. Self-organization at surfaces in strained heterostructures drives the formation of quantum dots (QDs). Embedding QDs in photonic and electronic devices enables novel functionalities, advanced energy efficient communication, cyber security, or lighting systems. The recombination of excitons shows twofold degeneracy and Lorentzian broadening. The superposition of millions of excitonic recombinations from QDs in real devices leads to a Gaussian envelope. The material gain of QDs in lasers is orders of magnitude larger than that of bulk material and decoupled from the index of refraction, controlled by the properties of the carrier reservoir, thus enabling independent gain and index modulation. The threshold current density of QD lasers is lowest of all injection lasers, is less sensitive to defect generation, and does not depend on temperature below 80°C. QD lasers are hardly sensitive to back reflections and exhibit no filamentation. The recombination from single QDs inserted in light emitting diodes with current confining oxide apertures shows polarized single photons. Emission of ps pulses and date rates of 10 10 + bit upon direct modulation benefits from gain recovery within femtoseconds. Repetition rates of several 100 GHz were demonstrated upon mode-locking. Passively mode-locked QD lasers generate hat-like frequency combs, enabling Terabit data transmission. QD-based semiconductor optical amplifiers enable multi-wavelength amplification and switching and support multiple modulation formats.Keywords: quantum dot growth and electronic properties; quantum dot lasers; ultra-fast lasers and amplifiers; single q-bit emitters.

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“…In the case of bulk or Quantum Well (QW) edge-emitting lasers, the large equivalent spot size can in principle be achieved in markedly asymmetric waveguide structures, which also have the advantage of supporting only a single fundamental transverse mode for any stripe width. By comparison with alternative high-power transmitter designs based on master oscillator optical power amplifiers or photonic band crystal laser diodes [23], [24], this has the advantage of a much simpler construction as well as promising better pulse performance. Moreover, the principle referred to above ðd act =À )Þ is a general one, implying that it works with all types of laser diodes.…”

Section: Introductionmentioning

confidence: 99%

On Laser Ranging Based on High-Speed/Energy Laser Diode Pulses and Single-Photon Detection Techniques

et al. 2015

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This paper discusses the construction principles and performance of a pulsed time-of-flight (TOF) laser radar based on high-speed (FWHM $100 ps) and high-energy ($1 nJ) optical transmitter pulses produced with a specific laser diode working in an "enhanced gain-switching" regime and based on single-photon detection in the receiver. It is shown by analysis and experiments that single-shot precision at the level of 2W3 cm is achievable. The effective measurement rate can exceed 10 kHz to a noncooperative target (20% reflectivity) at a distance of 9 50 m, with an effective receiver aperture size of 2:5 cm 2 . The effect of background illumination is analyzed. It is shown that the gating of the SPAD detector is an effective means to avoid the blocking of the receiver in a high-level background illumination case. A brief comparison with pulsed TOF laser radars employing linear detection techniques is also made.

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10.7 W peak power picosecond pulses from high-brightness photonic band crystal laser diode

Cited by 13 publications

References 12 publications

High-Energy Picosecond Pulse Generation by Gain Switching in Asymmetric Waveguide Structure Multiple Quantum Well Lasers

High-Energy Picosecond Pulse Generation by Gain Switching in Asymmetric Waveguide Structure Multiple Quantum Well Lasers

Semiconductor nanostructures for flying q-bits and green photonics

On Laser Ranging Based on High-Speed/Energy Laser Diode Pulses and Single-Photon Detection Techniques

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