High-power gas-discharge EUV source

Borisov, V. M.; Vinokhodov, A Yu; Ivanov, Alexander S.; Kiryukhin, Yu B; Mironov, Sergey V.; Mishchenko, V.A.; Prokof'ev, A V; Khristoforov, O B

doi:10.1134/1.1513842

Cited by 3 publications

(1 citation statement)

References 8 publications

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“…Part of this work was supported by the XTREME technologies. Having started from large-size plasma pinches of 20 mm length and 1 mm diameter [15,16], then [17,18] we matched the pinch size and the emission solid angle to the requirements of a HVM lithography tool [1].…”

Section: Euv Sources Using Xementioning

confidence: 99%

EUV sources using Xe and Sn discharge plasmas

Borisov¹,

Eltsov²,

Ivanov³

et al. 2004

J. Phys. D: Appl. Phys.

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This paper reports the basic results that have been obtained at the SRC RF TRINITI (the former Branch of the Kurchatov Institute of Atomic Energy). The work deals with the development of high power discharge produced plasma EUV sources that can meet the requirements of high volume manufacturing lithography tools. Solving the problem of extremely high thermal loads on the electrodes of a EUV source by moving away the electrode surfaces from the plasma and using both multi-discharge systems and rotating Sn-covered disc electrodes is discussed.

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Section: Euv Sources Using Xementioning

confidence: 99%

EUV sources using Xe and Sn discharge plasmas

Borisov¹,

Eltsov²,

Ivanov³

et al. 2004

J. Phys. D: Appl. Phys.

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Elongation of extreme ultraviolet (at 13.5 nm) emission with time-of-flight controlled discharges and lateral fuel injection

Hosokai

Yokoyama²,

Zhidkov

et al. 2008

Journal of Applied Physics

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A way toward a quasicontinuous extreme ultraviolet ͑EUV͒ radiation source is proposed and explored. Tin and lithium vapor discharges with the lateral laser-ablation injection are experimentally studied as possible efficient sources of quasicontinuous emission of EUV radiation at a wavelength of 13.5 nm. It is shown that the time-of-flight control of optimal plasma parameters by means of varying ablating laser pulse parameters provides a considerable elongation of maximal-power EUV emission with an overall efficiency of 0.1% and with an energy output exceeding 1% of the energy deposited in the discharge plasma. Along with a high average power and a stable position, such an emitter may have its size small enough to be used in the projection lithography.

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