EUV sources using Xe and Sn discharge plasmas

Borisov, V. M.; Eltsov, Aleksander V; Ivanov, A; Kiryukhin, Yuriy B.; Khristoforov, O B; Mishchenko, V.A.; Prokofiev, A. V.; Vinokhodov, A Yu; Vodchits, V A

doi:10.1088/0022-3727/37/23/006

Cited by 48 publications

(24 citation statements)

References 18 publications

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“…Adequate in-band EUV power supplied by these sources is the key to high volume-production throughput and low cost of ownership [18][19][20][21][22][23][24][25]. Because of the EUV absorption in gases, the source chamber, optical chamber, and wafer printing chamber are kept at the same vacuum level without filters, which necessitates strict debris and contamination control.…”

Section: Euv Sourcementioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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In this paper, next-generation lithography (NGL) for the 22 and 16 nm technology nodes and beyond is reviewed. A broad range of topics, including history, technologies, critical challenges, and the most plausible candidates are discussed. The 22 and 16 nm technology nodes rely on NGL. NGLs have been extensively studied. Because of technological issues, the semiconductor industry has stopped pursuing several NGLs, such as X-ray proximity lithography, ion projection lithography, and scattering with angular limitation projection electron lithography. Currently, the primary candidate technologies are extreme ultraviolet lithography (EUVL), maskless lithography (ML2), and nanoimprint lithography (NIL), with EUVL being the leading candidate. Since EUVL was first proposed in 1988, many studies have been conducted. Currently, there is no "show stopper" for EUVL. Moreover, challenges are present in almost all aspects of EUVL technology. Almost all primary semiconductor manufacturing companies plan to implement commercial pre-production step-and-scan exposure tools in 2011. However, EUVL power at an intermediate focusing level has not yet met the volume manufacturing requirements. EUVL resists have been significantly improved recently, but there is still a critical need to meet requirements on resolution, line width roughness, and sensitivity. Creating a defect-free EUVL mask is another obstacle to the application of EUVL. ML2 and NIL, like EUVL, have also undergone significant progress recently, but throughput, defect control, and cost remain the critical impediments for practical application.

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Section: Euv Sourcementioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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“…Hence, a novel sensitive evaluation method, which can detect contamination equivalent to 0.1% or lower reflectivity drop, Manuscript is probably indispensable to develop. Presently, xenon (Xe) is commonly employed as a material of a plasma but, since its conversion efficiency into 2π steradian, is around 1% at the maximum [4]. The thermal load in the source vacuum chamber will become high, and the cost of cooling heavy heat deposition in vacuum will exponentially grow.…”

Section: Introductionmentioning

confidence: 99%

Detection of Atomic-Level Surface Contamination by Extreme Ultraviolet Photoelectron Spectroscopy Technology

Lee

Tomie

Jessie

et al. 2009

IEEE Trans. Plasma Sci.

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The performance of an extreme ultraviolet (EUV) photoelectron spectroscopy (EUPS) as a detector of tin (Sn) contamination on ultralow-level surface is studied using a 4.86-nm photon which is generated from boron-nitride plasma. The signal at 130 ns is normalized by the valence band signal at 105 ns to compensate for possible fluctuation of EUV intensity, which shows that Sn debris by laser ablation of ten shots cover the whole surface of a Si wafer. The intensity of the 130-ns peak decreased as the Sn coverage is decreasing. The Sn 4d electron peak having a binding energy of 25 eV was a good indicator of Sn contamination. The EUPS is proved to be sensitive to one atomic-layer contamination and have detect ability of several-percent coverage Sn contamination or 0.3% reflectivity drop.Index Terms-Boron-nitride (BN) plasma, extreme ultraviolet photoelectron spectroscopy (EUPS), surface contamination, timeof-flight (TOF) method, tin (Sn).

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“…Retarded E1, E2, and E3 matrix elements are evaluated in both length and velocity forms. A detailed discussion of the various contributions to the dipole matrix elements and energy levels is given for palladium-like xenon (Z = 54), which plays an important role in laser-produced plasma [2], Z-pinch plasma [18][19][20], gas-discharge plasma [21][22][23][24][25][26] for EUV lithography applications.…”

Section: Introductionmentioning

confidence: 99%

Relativistic many-body calculations of atomic properties in Pd-like ions

Safronova¹,

Bista²,

Bruch³

et al. 2008

Can. J. Phys.

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Wavelengths, transition rates, and line strengths are calculated for the 85 possible multipole transitions between the excited 4p 6 4d 9 4f , 4p 6 4d 9 5l, 4p 5 4d 10 4f , and 4p 5 4d 10 5l states and the ground 4p 6 4d 10 state in Pd-like ions with the nuclear charges ranging from Z = 47 to 100. Relativistic many-body perturbation theory (RMBPT), including the Breit interaction, is used to evaluate energies and transition rates for multipole transitions in hole-particle systems. This method is based on the relativistic many-body perturbation theory, agrees with MCDF calculations in lowest order, includes all second-order correlation corrections, and includes corrections from negative energy states. The calculations start from a [Zn]4p 6 4d 10 Dirac-Fock potential. First-order perturbation theory is used to obtain intermediate-coupling coefficients, and second-order RMBPT is used to determine the matrix elements. The contributions from negative-energy states are included in the second-order multipole matrix elements. The resulting transition energies and transition rates are compared with experimental values and with results from other recent calculations. Trends of the transitions rates for the selected multipole transitions as function of Z are illustrated graphically. The Z dependence of the energy splitting for all triplet terms of the 4p 6 4d 9 4f and 4p 6 4d 9 5l configurations are shown for Z = 47-100. PACS Nos.: 31.15.Ar, 31.15.Md, 32.70.Cs, 32.30.Rj, 31.25.Jf Résumé : Nous avons calculé les longueurs d'onde, les taux de transition et les intensités de ligne pour les 85 transitions multipolaires possibles entre les états excités 4p 6 4d 9 4f,4p 6 4d 9 5l et 4p 5 4d 10 5l et le fondamental dans des ions de type Pd avec charge nucléaire Z = 47 à 100. Nous utilisons une théorie perturbative relativiste à N-corps (RMBPT), incluant une interaction de Breit, pour évaluer les énergies et les taux des transition multipolaires dans ces systèmes à particules-trous. Cette méthode est basée sur la théorie perturbative relativiste à N -corps ; elle agrée avec les calculs MCDF à l'ordre le plus bas et inclut toutes les corrections de corrélation au second ordre, ainsi que les corrections pour les états d'énergie négative. Les calculs débutent avec un potentiel de Dirac-Fock pour le [Zn]4p 6 4d 10 . Nous utilisons d'abord la méthode perturbative au premier ordre pour calculer les coefficients de couplage intermédiaire et ensuite RMBPT au deuxième ordre pour déterminer les éléments de matrice. Les contributions venant des états d'énergie négative sont incluses dans les éléments de matrice multipolaire au second ordre. Nous comparons avec d'autres calculs nos résultats pour les énergies de transition et les taux de transition. Nous illustrons graphiquement en fonction de Z les tendances des taux de transition pour les multipoles sélectionnés. Nous donnons aussi les énergies de séparation pour tous les termes triplets des configurations 4p 6 4d 9 4f et 4p 6 4d 9 5l pour Z = 47 à 100.[Traduit par la Rédaction]

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EUV sources using Xe and Sn discharge plasmas

Cited by 48 publications

References 18 publications

Next-generation lithography for 22 and 16 nm technology nodes and beyond

Next-generation lithography for 22 and 16 nm technology nodes and beyond

Detection of Atomic-Level Surface Contamination by Extreme Ultraviolet Photoelectron Spectroscopy Technology

Relativistic many-body calculations of atomic properties in Pd-like ions

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