High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well Power High-Electron-Mobility Transistors for 2.4 V Medium-Power Wireless Communication Applications

Abstract

A high-power-density and high-efficiency molecular-beam-epitaxy-grown atomic-planar-doped AlGaAs/InGaAs quantum-well power high-electron-mobility transistor (HEMT) was developed for low-voltage medium-power wireless communication applications. The HEMT exhibited a maximum drain current of 420 mA/mm and a maximum transconductance of 275 mS/mm. A two-dimensional electron gas with a high sheet charge density and a high electron mobility in the InGaAs quantum well contributed to the high current density and high transconductance of the HEMT and enhanced the device power performance at low operating voltage. An output power density of 177 mW/mm and a power-added efficiency of 61% were achieved by the 2 mm HEMT at a drain voltage of 2.4 V and a frequency of 900 MHz. At 2.1 V drain voltage and 2.4 GHz frequency, the device demonstrated an output power of 24.4 dBm and a power-added efficiency of 57.4%. An adjacent channel leakage power of -55 dBc was attained for the 1.9-GHz π/4-shifted quadrature phase shift keying modulation when the output power was 22.2 dBm and the drain voltage was 2.4 V.

A 1.2-volt operation power PHEMT for personal handy phone handset application

“…Many efforts were made to develop high speed, high efficiency, high output power, low distortion devices for wireless data communication applications, including the personal handy phone system (PHS) and the third generation (3G) wireless communication systems. GaAs based devices such as metal-semiconductor field-effect transistors (MESFET's) [1][2] and heterojuction field-effect transistors (HFET's) [3][4] with outstanding performance have been demonstrated for wireless communication applications. Recently, 1.9-GHz Japanese PHS system [5][6][7][8] has been introduced to more than 10 countries due to its capability for both voice and data communication.…”