High-Performance Vertical β-Ga₂ O₃ Schottky Barrier Diodes Featuring P-NiO JTE with Adjustable Conductivity

1 mm2, 3.6 kV, 4.8 A NiO/Ga2O3 Heterojunction Rectifiers

“…6 shows a compilation of reported Ron vs V B results reported in the literature for Ampereclass rectifiers and includes conventional Schottky barrier or JBS rectifiers and NiO/Ga 2 O 3 heterojunction rectifiers. 23,[33][34][35][36][37][38][39][40][41][42][43][44] The theoretical lines for the 1D unipolar limits of SiC, GaN and Ga 2 O 3 are also shown. The result in this work is the first demonstration of large area, Ampere-class Ga 2 O 3 rectifiers surpassing the theoretical limits of GaN and SiC.…”

“…1,3,23,[32][33][34][35][36][37][38] Another crucial focus is to have larger area devices to achieve high conduction currents, while simultaneously retaining the kV breakdown characteristics. 23,32,[34][35][36][37][38][39][40][41][42][43] Qin et al 1 recently reviewed the status of packaging and device performance of Ampere-class Ga 2 O 3 Schottky, Junction Barrier Schottky, heterojunction rectifiers and MOSFETs and their switching recovery characteristics, and surge-current and over-voltage ruggedness.…”

Superior high temperature performance of 8 kV NiO/Ga2O3vertical heterojunction rectifiers

“…The switching characteristics of the rectifiers are also of paramount interest, since they need fast recovery times and the ability to switch large currents. [45][46][47][48][49][50][51][52][53][54][55][56][57][58][59][60][61][62][63] Fig. 9 shows the temperature dependence of (top) Schottky rectifiers and (bottom) NiO/ Ga 2 O 3 heterojunction rectifiers of reverse recovery characteristics in which the devices were switched from 60 mA forward current to 0 V. The reverse recovery times are B 26 AE 2 ns and are tabulated in Table 1.…”

The origin of twins in the growth of the (100) plane of a β-Ga2O3 crystal using EFG

“…3 The performance of β-Ga 2 O 3 crystals can also be tuned by different dopants, such as Sn and Si to increase the carrier concentration in the crystal, Fe and Mg to obtain an insulating substrate, and Ti, to obtain the laser output. [4][5][6][7] These good qualities allow β-Ga 2 O 3 crystals to be used in semiconductor lasers, 8 high-temperature gas sensors, 9 deep UV detectors, 10 scintillation detectors, 11 field effect transistors, 12,13 Schottky barrier diodes, [14][15][16] and transparent conductive electrodes. 17 β-Ga 2 O 3 crystals can be grown by melt methods, such as the floating zone (FZ), [18][19][20] Czochralski (CZ), [21][22][23][24] vertical Bridgman (VB), [25][26][27] and edge-defined film-fed growth (EFG) methods.…”