1 mm2, 3.6 kV, 4.8 A NiO/Ga2O3 Heterojunction Rectifiers

Li, Jian-Sian; Chiang, Chao-Ching; Xia, Xinyi; Wan, Hsiao-Hsuan; Ren, F.; Pearton, S. J.

doi:10.1149/2162-8777/aceaa8

Cited by 5 publications

(6 citation statements)

References 54 publications

(89 reference statements)

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“…Additionally, they successfully demonstrated high-BV devices with a maximum of 6.5 kV, achieved through thermal annealing optimization [57]. They also showcased p-n diodes with a 3.6 kV BV and a 4.8 A current capability within a 1 mm 2 device area [61].…”

Section: P-nio X /β-Ga 2 O 3 Heterojunctionmentioning

confidence: 95%

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Herath Mudiyanselage,

Da,

Adivarahan

et al. 2024

Electronics

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During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and a high Baliga’s figure of merit (BFOM). Unipolar β-Ga2O3 devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs) have been demonstrated. Recently, there has been growing attention toward developing β-Ga2O3-based heterostructures and heterojunctions, which is mainly driven by the lack of p-type doping and the exploration of multidimensional device architectures to enhance power electronics’ performance. This paper will review the most recent advances in β-Ga2O3 heterostructures and heterojunctions for power electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, and β-Ga2O3 heterojunctions/heterostructures with other wide- and ultra-wide-bandgap materials and the integration of two-dimensional (2D) materials with β-Ga2O3. Discussions of the deposition, fabrication, and operating principles of these heterostructures and heterojunctions and the associated device performance will be provided. This comprehensive review will serve as a critical reference for researchers engaged in materials science, wide- and ultra-wide-bandgap semiconductors, and power electronics and benefits the future study and development of β-Ga2O3-based heterostructures and heterojunctions and associated power electronics.

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Section: P-nio X /β-Ga 2 O 3 Heterojunctionmentioning

confidence: 95%

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Herath Mudiyanselage,

Da,

Adivarahan

et al. 2024

Electronics

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“…To contextualize the present study, Figure 6 presents a compilation of reported specific Ron versus V B outcomes documented in the literature for rectifiers in the Ampere-class range. This compilation encompasses conventional Schottky barrier or JBS rectifiers, as well as NiO/Ga 2 O 3 heterojunction rectifiers [22,25,[29][30][31]33,35]. The theoretical lines representing the one 1D unipolar limits of SiC, GaN, and Ga 2 O 3 are also included for reference.…”

Section: Referencementioning

confidence: 99%

“…A promising recent development entails the incorporation of NiO as a p-type conducting layer to engender p-n heterojunctions with the n-type Ga 2 O 3 [21,, partially mitigating the inherent absence of native p-type doping capabilities in Ga 2 O 3 . Nevertheless, formidable challenges persist, encompassing the optimization of edge termination and effective heat dissipation management, vital prerequisites for ensuring device reliability [1,5,20,25,[32][33][34][35][36][37][38]. Another paramount endeavor entails the realization of larger area devices capable of facilitating substantial conduction currents, while concurrently upholding their kV-level breakdown characteristics [1,22,25,[29][30][31]33,35].…”

Section: Introductionmentioning

confidence: 99%

“…Nevertheless, formidable challenges persist, encompassing the optimization of edge termination and effective heat dissipation management, vital prerequisites for ensuring device reliability [1,5,20,25,[32][33][34][35][36][37][38]. Another paramount endeavor entails the realization of larger area devices capable of facilitating substantial conduction currents, while concurrently upholding their kV-level breakdown characteristics [1,22,25,[29][30][31]33,35].…”

Section: Introductionmentioning

confidence: 99%

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NiO/Ga2O3 Vertical Rectifiers of 7 kV and 1 mm2 with 5.5 A Forward Conduction Current

Li,

Wan,

Chiang

et al. 2023

Crystals

Self Cite

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In this study, we present the fabrication and characterization of vertically oriented NiO/β polymorph n-Ga2O3/n+ Ga2O3 heterojunction rectifiers featuring a substantial area of 1 mm2. A dual-layer SiNX/SiO2 dielectric field plate edge termination was employed to increase the breakdown voltage (VB). These heterojunction rectifiers exhibit remarkable simultaneous achievement of high breakdown voltage and substantial conducting currents. In particular, the devices manifest VB of 7 kV when employing a 15 µm thick drift layer doping concentration of 8.8 × 1015 cm−3, concurrently demonstrating a forward current of 5.5 A. The thick drift layer is crucial in obtaining high VB since similar devices fabricated on 10 µm thick epilayers had breakdown voltages in the range of 3.6–4.0 kV. Reference devices fabricated on the 15 µm drift layers had VB of 5 kV. The breakdown is still due to leakage current from tunneling and thermionic emission and not from avalanche breakdown. An evaluation of the power figure-of-merit, represented by VB2/RON, reveals a value of 9.2 GW·cm−2, where RON denotes the on-state resistance, measuring 5.4 mΩ·cm2. The Coff was 4 nF/cm2, leading to an RON × Coff of 34 ps and FCO of 29 GHz. The turn-on voltage for these rectifiers was ~2 V. This exceptional performance surpasses the theoretical unipolar one-dimensional (1D) limit of both SiC and GaN, underscoring the potential of β-Ga2O3 for forthcoming generations of high-power rectification devices.

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“…Optimization of the heterojunction rectifier device structure is crucial to achieve both high V B and low R ON , as well as providing management of the maximum electric fields within the structure to enhance further the device voltage blocking capability [40][41][42][43][44][45]. The design variables include the thickness and doping of the layers, doping in the drift layer and the use of the NiO as a guard ring by extending it beyond the metal cathode [46][47][48][49][50][51][52][53][54][55][56][57][58][59][60][61][62]. In this paper, we report an investigation of the uniformity of achieving high V B and low R ON in heterojunction rectifiers, the effect of drift layer doping and the temperature dependence of the performance of NiO/Ga 2 O 3 to 600 K.…”

Section: Introductionmentioning

confidence: 99%

Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage >8 kV

Wan

Chiang

et al. 2023

Crystals

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Optimized vertical heterojunction rectifiers with a diameter of 100 µm, consisting of sputter-deposited p-type NiO forming a p–n junction with thick (10 µm) Ga2O3 drift layers grown by halide vapor phase epitaxy (HVPE) on (001) Sn-doped (1019 cm−3) β-Ga2O3 substrates, exhibited breakdown voltages >8 kV over large areas (>1 cm2). The key requirements were low drift layer doping concentrations (<1016 cm3), low power during the NiO deposition to avoid interfacial damage at the heterointerface and formation of a guard ring using extension of the NiO beyond the cathode metal contact. Breakdown still occurred at the contact periphery, suggesting that further optimization of the edge termination could produce even larger breakdown voltages. On-state resistances without substrate thinning were <10 mΩ.cm−2, leading to power figure-of-merits >9 GW.cm−2. The devices showed an almost temperature-independent breakdown to 600 K. These results show the remarkable potential of NiO/Ga2O3 rectifiers for performance beyond the limits of both SiC and GaN. The important points to achieve the excellent performance were: (1) low drift doping concentration, (2) low power during the NiO deposition and (3) formation of a guard ring.

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1 mm², 3.6 kV, 4.8 A NiO/Ga₂O₃ Heterojunction Rectifiers

Cited by 5 publications

References 54 publications

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

NiO/Ga2O3 Vertical Rectifiers of 7 kV and 1 mm2 with 5.5 A Forward Conduction Current

Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage >8 kV

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