High-Performance Vertical $\beta$ -Ga<sub>2</sub>O<sub>3</sub>Schottky Barrier Diode With Implanted Edge Termination

Zhou, Hong; Feng, Qian; Ning, Jing; Zhang, Chunfu; Ma, Pengtao; Hao, Yue; Yan, Qinglong; Zhang, Jincheng; Li, Yuanjie; Liu, Z.; Zhang, Yanni; Dang, Kui; Dong, Pengfei; Feng, Zhaoqing

doi:10.1109/led.2019.2939788

Cited by 102 publications

(42 citation statements)

References 28 publications

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“…8, achieved an enhancement of V br to 1.43 kV with keeping the same level of R on [81]. Mg-ion implantation doping and fluorine treatment were also employed to form guard rings [82,83]. As another attempt to increase V br , β-Ga 2 O 3 trench SBDs have also been developed [84][85][86].…”

Section: Sbdmentioning

confidence: 99%

β-Ga2O3 material properties, growth technologies, and devices: a review

Higashiwaki

2022

AAPPS Bull.

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Rapid progress in β-gallium oxide (β-Ga2O3) material and device technologies has been made in this decade, and its superior material properties based on the very large bandgap of over 4.5 eV have been attracting much attention. β-Ga2O3 appears particularly promising for power switching device applications because of its extremely large breakdown electric field and availability of large-diameter, high-quality wafers manufactured from melt-grown bulk single crystals. In this review, after introducing material properties of β-Ga2O3 that are important for electronic devices, current status of bulk melt growth, epitaxial thin-film growth, and device processing technologies are introduced. Then, state-of-the-art β-Ga2O3 Schottky barrier diodes and field-effect transistors are discussed, mainly focusing on development results of the author’s group.

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Section: Sbdmentioning

confidence: 99%

β-Ga2O3 material properties, growth technologies, and devices: a review

Higashiwaki

2022

AAPPS Bull.

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“…Hu et al [ 141 ] demonstrated a field-plated lateral β-Ga 2 O 3 SBD on a sapphire substrate with a reverse blocking voltage of more than 3 kV, an R on of 24.3 mΩcm 2 (anode–cathode spacing 24 μm), and an FOM >0.37 GWcm −2 (while an FOM of ~500 GWcm −2 was achieved as the anode-cathode spacing (and V br ) was reduced). Zhou et al [ 149 ] implemented a Mg implanted ET device on a vertical β-Ga 2 O 3 SBD with a reverse blocking voltage of 1.55 kV and a low specific on-resistance of 5.1 mΩcm 2 (epi thickness 10 μm) and an FOM of 0.47 GWcm −2 . Analogously, Lin et al [ 150 ] implemented a guard ring with or without an FP on vertical SBDs.…”

Section: Gallium Oxide (Ga 2 O 3 )mentioning

confidence: 99%

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

et al. 2022

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Currently, a significant portion (~50%) of global warming emissions, such as CO2, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. Ultra-wide bandgap (UWBG) semiconductors are at the very frontier of electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and solar-blind deeper ultraviolet optoelectronics. Gallium oxide—Ga2O3 (4.5–4.9 eV), has recently emerged pushing the limits set by more conventional WBG (~3 eV) materials, such as SiC and GaN, as well as for transparent conducting oxides (TCO), such asIn2O3, ZnO and SnO2, to name a few. Indeed, Ga2O3 as the first oxide used as a semiconductor for power electronics, has sparked an interest in oxide semiconductors to be investigated (oxides represent the largest family of UWBG). Among these new power electronic materials, AlxGa1-xO3 may provide high-power heterostructure electronic and photonic devices at bandgaps far beyond all materials available today (~8 eV) or ZnGa2O4 (~5 eV), enabling spinel bipolar energy electronics for the first time ever. Here, we review the state-of-the-art and prospects of some ultra-wide bandgap oxide semiconductor arising technologies as promising innovative material solutions towards a sustainable zero emission society.

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“…As a beneficial result of the excellent material properties, the Baliga's figure of merit is yielded to be around 3000, which is several times higher than that value of SiC and GaN [6]. However, due to the challenge of acquiring p-type Ga 2 O 3 , most research attention is paid to unipolar devices, including both the lateral and vertical field effect transistors (FETs) and diodes [7][8][9][10][11][12]. In particular, vertical diodes are regarded as the most promising commercial available product within the next 2-3 years.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation

et al. 2021

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In this paper, we carried out a comprehensive study and optimization of implementing p-NiO in the β-Ga2O3 based diodes, including Schottky barrier diode (SBD) with p-NiO guard ring (GR), p-NiO/β-Ga2O3 heterojunction (HJ) barrier Schottky (HJBS) diode, and HJ-PN diode through the TCAD simulation. In particular, we provide design guidelines for future p-NiO-related Ga2O3 diodes with material doping concentrations and dimensions to be taken into account. Although HJ-PN has a ~1 V higher turn-on voltage (Von), its breakdown voltage (BV) is the highest among all diodes. We found that for SBD with p-NiO GRs and HJBS, their forward electrical characteristics and reverse leakage current are related to the total width and the doping concentration of p-NiO, the BV is only related to the doping concentration of p-NiO, and the optimal doping concentration of p-NiO is found to be 4 × 1017 cm−3. Compared with the SBD without p-NiO, the BV of the SBD with p-NiO and HJBS diode can be essentially improved by 3 times. As a result, HJ-PN diode, SBD with p-NiO GRs, and HJ-BS diode achieve a BV/specific on-resistance (Ron,sp) of 5705 V/4.3 mΩ·cm2, 3006 V/3.07 mΩ·cm2, and 3004 V/3.06 mΩ·cm2, respectively. Based on different application requirements, this work provides a useful insight about the diode selection with various structures.

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High-Performance Vertical $\beta$ -Ga₂O₃Schottky Barrier Diode With Implanted Edge Termination

Cited by 102 publications

References 28 publications

β-Ga2O3 material properties, growth technologies, and devices: a review

β-Ga2O3 material properties, growth technologies, and devices: a review

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation

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High-Performance Vertical $\beta$ -Ga2O3Schottky Barrier Diode With Implanted Edge Termination

Cited by 102 publications

References 28 publications

β-Ga2O3 material properties, growth technologies, and devices: a review

β-Ga2O3 material properties, growth technologies, and devices: a review

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation

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Product

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High-Performance Vertical $\beta$ -Ga₂O₃Schottky Barrier Diode With Implanted Edge Termination