High performance type II superlattice focal plane array with 6μm cutoff wavelength

Miura, K.; Machinaga, Ken-ichi; Balasekaran, Sundararajan; Kawahara, Takahiko; Migita, Masaki; Ishiguro, Hiroshi; Iguchi, Yasuhiro; Sakai, Michito; Murooka, Jumpei; Katayama, Haruyoshi; Kimata, Masafumi

doi:10.1117/12.2223634

Cited by 4 publications

(2 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The operability and uniformity of responsivity were 89% and 83.17%, respectively. Compared with the previously reported MWIR and LWIR FPAs, [8,21] the operability and uniformity are not satisfactory. However, they can be further improved by optimizing the fabrication steps and the quality of the wafers.…”

Section: Focal Plane Arraycontrasting

confidence: 72%

Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-II InAs/GaSb superlattice

et al. 2017

View full text Add to dashboard Cite

A very long wavelength infrared(VLWIR) focal plane array based on InAs/GaSb type-II super-lattices is demonstrated on a GaSb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 µm, at 77 K. A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of −20 mV, yielding a peak specific detectivity of 5.89 × 10 10 cm•Hz 1/2 •W −1 . The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.

show abstract

Section: Focal Plane Arraycontrasting

confidence: 72%

Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-II InAs/GaSb superlattice

et al. 2017

View full text Add to dashboard Cite

show abstract

“…Razeghi and co-workers [22], in 2015, presented pMp design T2SL FPA (27 μm pitch in 320 × 256 format, 2.4 A/W peak responsivity at 4.2 μm with 68.6% quantum efficiency, detectivity 3.5 × 10 11 Jones, NETDs 11 mK and 15 mK at 81 K and 110 K, respectively). In 2016, a FPA which had following properties: p-i-n design, 320 × 256 format, 30 μm pitch, 4 × 10 −7 A/cm 2 dark current at 77 K with -20 mV bias, 31 mK NETD (f/2.3 optics) at 77 K with integration time of 1.2 ms presented by Miura et al [23]. 99% operability, 1.2 A/W responsivity at 4.1 μm wavelength, and 4.1 × 10 12 cm/Hz 1/2 detectivity were obtained.…”

mentioning

confidence: 99%

High Performance 15-μm Pitch 640 × 512 MWIR InAs/GaSb Type-II Superlattice Sensors

Oguz¹,

Ulker²,

Arslan³

et al. 2022

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

We report the high performance of Mid-wave Infrared Region (MWIR) InAs/GaSb Type-II Superlattice (T2SL) sensors with 640 × 512 format and 15-μm pixel pitch at both Focal Plane Array (FPA) and pixel level. The p-intrinsic-Barriern epilayer structure is adopted for this study, which is grown on 620 ± 30 μm thick GaSb substrate and highly-doped GaSb cap layer at the top structure. The mesa type pixels with sizes of 220 μm × 220 μm have dark currents 7.8 × 10 −12 A at 77 K both of which are equivalent to state-of-the-art values for Type-II Superlattice sensors. The various passivation techniques to lower the dark current are applied and the results are given in terms of dark current. Electro-optical measurements yielded comparable results to literature. After gathering data and optimizing the fabrication conditions, the FPA of 15-μm pitch having 4.92 μm cut-off wavelength (λ c ) shows 1.6 A/W peak responsivity, Noise Equivalent Temperature Difference (NETD) of 22.6 mK with optics of f/2.3, quantum efficiency larger than 65% and 99.75% operability. The acquired images by using aforementioned FPA device is presented in this paper. With the reduction of dark current, an encouraging imaging performance is obtained which shows the potential of the Type-II Superlattice detectors in 3 rd generation infrared sensors.

show abstract

Relative performance analysis of IR FPA technologies from the perspective of system level performance

Haran

James

Cincotta

2017

Infrared Physics & Technology

View full text Add to dashboard Cite

High performance type II superlattice focal plane array with 6μm cutoff wavelength

Cited by 4 publications

References 14 publications

Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-II InAs/GaSb superlattice

Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-II InAs/GaSb superlattice

High Performance 15-μm Pitch 640 × 512 MWIR InAs/GaSb Type-II Superlattice Sensors

Relative performance analysis of IR FPA technologies from the perspective of system level performance

Contact Info

Product

Resources

About