Abstract:We report the high performance of Mid-wave Infrared Region (MWIR) InAs/GaSb Type-II Superlattice (T2SL) sensors with 640 × 512 format and 15-μm pixel pitch at both Focal Plane Array (FPA) and pixel level. The p-intrinsic-Barriern epilayer structure is adopted for this study, which is grown on 620 ± 30 μm thick GaSb substrate and highly-doped GaSb cap layer at the top structure. The mesa type pixels with sizes of 220 μm × 220 μm have dark currents 7.8 × 10 −12 A at 77 K both of which are equivalent to state-of-… Show more
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