High-Performance Thin-Film Transistors of Quaternary Indium–Zinc–Tin Oxide Films Grown by Atomic Layer Deposition

Baek, In‐hwan; Pyeon, Jung Joon; Han, Seong Ho; Lee, Ga-Yeon; Choi, Byung Joon; Han, Jeong Hwan; Chung, Taek‐Mo; Hwang, Cheol Seong; Kim, Seong Keun

doi:10.1021/acsami.9b03331

Cited by 54 publications

(38 citation statements)

References 47 publications

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“…So far, many articles on sputtering-deposited AZO films and correspondingly application examples have been reported [ 11 , 12 , 13 , 14 ]. However, the sputtering process suffers from the distinct disadvantages of high-vacuum background pressure, surface damage of pre-deposited films, worse repeatability, and film composition limitations [ 15 , 16 ]. Therefore, it is important to develop novel processes for depositing transparent conductive AZO films.…”

Section: Introductionmentioning

confidence: 99%

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

et al. 2022

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Transparent electrodes are a core component for transparent electron devices, photoelectric devices, and advanced displays. In this work, we fabricate fully-transparent, highly-conductive Al-doped ZnO (AZO) films using an atomic layer deposition (ALD) system method of repeatedly stacking ZnO and Al2O3 layers. The influences of Al cycle ratio (0, 2, 3, and 4%) on optical property, conductivity, crystallinity, surface morphology, and material components of the AZO films are examined, and current conduction mechanisms of the AZO films are analyzed. We found that Al doping increases electron concentration and optical bandgap width, allowing the AZO films to excellently combine low resistivity with high transmittance. Besides, Al doping induces preferred-growth-orientation transition from (002) to (100), which improves surface property and enhances current conduction across the AZO films. Interestingly, the AZO films with an Al cycle ratio of 3% show preferable film properties. Transparent ZnO thin film transistors (TFTs) with AZO electrodes are fabricated, and the ZnO TFTs exhibit superior transparency and high performance. This work accelerates the practical application of the ALD process in fabricating transparent electrodes.

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Section: Introductionmentioning

confidence: 99%

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

et al. 2022

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“…Although binary metal‐oxide channel systems offer simple composition and processing, securing the high mobility and controllability of V TH and excellent I ON/OFF ratio simultaneously can be difficult. To overcome this limit of binary oxides, multi‐component oxide materials such as ternary (indium gallium oxide [IGO], 55–57 indium zinc oxide [IZO], 58–60 and zinc tin oxide [ZTO] 61,62 ) and quaternary oxide (indium gallium zinc oxide [IGZO], 63–68 and indium zinc tin oxide [IZTO] 69,70 ) species have been examined as active‐material candidates for high‐performance TFTs. The design rationale should balance mobility enhancement and carrier suppression.…”

Section: Ald‐derived N‐channel Oxide Tftsmentioning

confidence: 99%

“…Superior performance was exhibited by the ALD‐derived IGZO TFTs in the form of a high μ FE of 36.6 cm 2 /Vs, a V TH of −0.51 V, an SS of 0.41 V/dec, and an I ON/OFF of 10 7 (Figure 7C). This can be attributed to the higher shallow‐to‐deep ratio of V O in ALD‐derived IGZO due to its greater density and lower V O concentration 70 . Sheng et al 68 reported assembling IGZO TFTs with a mobility of approximately 70 cm 2 /Vs by controlling the vertical dimension of the In 2 O 3 interlayer.…”

Section: Ald‐derived N‐channel Oxide Tftsmentioning

confidence: 99%

“…IZTO is a rising quaternary candidate for high‐performance oxide TFTs due to its low effective electron mass, which is a product of the synergic intercalation 5s orbital of In 3+ and Sn 4+ . Baek et al 70 investigated the influence of different cation composition, PDA temperature, and channel thickness on the performance of IZTO TFTs. They first performed a combinatorial cation study by assessing TFTs with different IZTO compositions during deposition of IZTO by ALD (Figure 7G).…”

Section: Ald‐derived N‐channel Oxide Tftsmentioning

confidence: 99%

“…(i) Variations in the electrical parameters ( μ FE , V ON , and SS ) of In 0.10 Zn 0.70 Sn 0.20 O TFT annealed at 400°C by different channel thickness. Reprinted with permission 70 . Copyright 2020, American Chemical Society…”

Section: Ald‐derived N‐channel Oxide Tftsmentioning

confidence: 99%

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Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

2022

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This paper reviews recent developments in the fabrication of high‐performance n‐channel metal‐oxide thin‐film transistors (TFTs) through atomic‐layer deposition (ALD), which are now attracting attention due to their potential for use in augmented and virtual reality, ultra‐high‐definition organic light‐emitting diodes, and flexible electronics. Recent trends in research on TFT backplanes for display applications are provided in the introduction. In the main section, ALD‐derived n‐type oxides serving as active layers are classified into binary, ternary, and quaternary systems, and recent developments and critical issues in n‐channel oxide TFTs are described. The performance of n‐channel oxide TFTs can be boosted through advanced architectures, including stacked heterojunction channels using two‐dimensional electron gases, and the introduction of high‐k dielectric such as ALD‐derived hafnium oxide, which is highlighted in this review. Finally, progress in p‐channel ALD‐derived oxide TFTs is briefly addressed with respect to complementary metal–oxide‐semiconductor applications.

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Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

Yan,

Wang,

Yan

et al. 2023

Adv Funct Materials

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High‐performance thin‐film transistors (TFTs) integrated circuits (ICs) have become increasingly necessary to meet the emerging demands such as healthcare, edge computing, and the Internet of Things, etc. This article aims to point out the potential development trends and bottlenecks of TFT ICs, enhancing their performance in terms of electronic performance, stability, consistency, CMOS design, and manufacturing capability. Basic device structures and overall metrics of TFT ICs are explored, as well as their superiority compared to silicon‐based ultrathin chips. Hydrogenated amorphous silicon, low‐temperature polycrystalline silicon, and amorphous oxide semiconductors are widely used in displays due to their ability to be deposited on large areas at low processing temperatures and low cost, and are validated in many prototypes for TFT ICs. Their conduction mechanisms, process flows, performance evaluation, and recent advances are comprehensively viewed. In addition, the potential of emerging low‐dimensional materials as next‐generation channel materials is discussed, along with their limitations and progress in this field. Finally, the major challenges in manufacturing high‐performance TFT ICs and future perspectives are summarized.

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High-Performance Thin-Film Transistors of Quaternary Indium–Zinc–Tin Oxide Films Grown by Atomic Layer Deposition

Cited by 54 publications

References 47 publications

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

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