Transparent electrodes are a core component for transparent electron devices, photoelectric devices, and advanced displays. In this work, we fabricate fully-transparent, highly-conductive Al-doped ZnO (AZO) films using an atomic layer deposition (ALD) system method of repeatedly stacking ZnO and Al2O3 layers. The influences of Al cycle ratio (0, 2, 3, and 4%) on optical property, conductivity, crystallinity, surface morphology, and material components of the AZO films are examined, and current conduction mechanisms of the AZO films are analyzed. We found that Al doping increases electron concentration and optical bandgap width, allowing the AZO films to excellently combine low resistivity with high transmittance. Besides, Al doping induces preferred-growth-orientation transition from (002) to (100), which improves surface property and enhances current conduction across the AZO films. Interestingly, the AZO films with an Al cycle ratio of 3% show preferable film properties. Transparent ZnO thin film transistors (TFTs) with AZO electrodes are fabricated, and the ZnO TFTs exhibit superior transparency and high performance. This work accelerates the practical application of the ALD process in fabricating transparent electrodes.
Oxide thin film transistors (TFTs) attract much attention in fields of advanced displays and low-cost integrated circuits (ICs). In this work, hafnium doped InSnO (Hf-ITO) thin films are deposited by co-sputtering process, and are applied as the active layer to TFTs. Notably, the Hf-ITO TFTs exhibit excellent device performance, preferable uniformity, and good gate-bias-stress stability. Major electrical parameters of the Hf-ITO TFTs include a field-effect mobility (µFE) of 7.46 cm 2 V -1 s -1 , a turn-on voltage (VON) of 1.10 V, a sub-threshold swing (SS) of 341.18 mV/decade, and an on/off state current ratio (ION/IOFF) over 10 5 . Our work proposes a novel method for developing high-mobility semiconductor oxide films and oxide TFTs.
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