High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel

Jeong, Jae Kyeong; Jeong, Jae Hoon; Yang, Hai; Park, Jin‐Seong; Mo, Yeon‐Gon; Kim, Hye Dong

doi:10.1063/1.2783961

Cited by 376 publications

(207 citation statements)

References 10 publications

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“…The better interface between the IO semiconductor and the Al 2 O 3 gate insulator also affected the hysteresis. 31 The gate bias stability is an important parameter in the assessment of materials and devices for further integrated applications. Resistances to positive gate bias stressand to negative gate bias stress are highly desirable for display applications.…”

Section: Resultsmentioning

confidence: 99%

An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

et al. 2013

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Metal-oxide semiconductors have attracted considerable attention as next-generation circuitry for displays and energy devices because of their unique transparency and high performance. We propose a simple, novel and inexpensive 'aqueous route' for the fabrication of oxide thin-film transistors (TFTs) at low annealing temperatures (that is, o200 1C). These results provide substantial progress toward solution-processed metal-oxide TFTs through naturally formed, unique indium complex and post annealing. The fabricated TFTs exhibited acceptable electrical performance with good large-area uniformity at low temperatures. Additional vacuum annealing facilitated the condensation reaction by effectively removing byproduct water molecules and resulted in the activation of the In 2 O 3 TFT at low annealing temperatures, even temperatures as low as 100 1C. In addition, we have demonstrated that the flexible and transparent oxide TFTs on plastic substrates exhibit good resistance to external gate bias stress. INTRODUCTIONMetal-oxide semiconductors (MOSs) are a unique class of materials that have both transparency and electronic conductivity. 1-3 Increasing demand for transparent semiconducting active materials has resulted in increased attention on the MOSs for next-generation electronics, including electronics for use in high-performance, flexible and transparent applications, because of their favorable field-effect mobility, high optical transparency and good environmental stability. 4,5 In the early studies, these materials were primarily prepared using a vacuum process. 6,7 Although the vacuum-based deposition method has advantages, the high fabrication cost and large-area device uniformity restrict its areas of application. We suggest a simple and novel 'aqueous route' for the fabrication of oxide thin-film transistors (TFTs) at low annealing temperatures (that is, o200 1C). These results provide substantial progress toward solutionprocessed metal-oxide TFTs via a unique indium complex (IC) and post annealing. In addition, we have demonstrated that the flexible and transparent oxide TFTs on plastic substrates exhibit good resistance to external gate bias stress.The solution-based synthesis approach is considered a promising solution to the issues of fabrication cost and device uniformity. This

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Section: Resultsmentioning

confidence: 99%

An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

et al. 2013

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“…1(a-c)). Crucially, they demonstrated that such a device could exhibit high mobility, stimulating much work on this system [24,25]. A second milestone on the road towards oxide electronics can be seen as the observation of the integer [26] and, more recently, fractional [27] quantum Hall effects in ZnO/MgZnO heterostructures by Tsukazaki et al (Fig.…”

Section: Introductionmentioning

confidence: 99%

Conductivity in transparent oxide semiconductors

King

Veal

2011

J. Phys.: Condens. Matter

222

180

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Abstract. Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band-gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the presence of interstitial and substitutional species are still somewhat open questions, it is one of the leading contenders for unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case of conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total conductivity in TCOs. We discuss models that attempt to explain both the bulk and surface conductivity based on features of the bulk band structure common across the TCOs, and compare these materials to other semiconductors. Finally, we briefly consider transparency in these materials, and its interplay with conductivity. Understanding this interplay, as well as the microscopic contenders for the conductivity of these materials, will prove essential to the future design and control of TCO semiconductors, and their implementation into novel multifunctional devices.

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“…As in previous articles, the decrease in the subthreshold swing may be attributed to the interface and bulk trap density of the TFTs [11]. In general, charge trapping is characterized by the total trap density (N t ), including the bulk trap density (N b ) of the channel layer and the interface trap density (N it ) between the dielectric/channel.…”

Section: Resultsmentioning

confidence: 98%

The Influence of Silicon Doping on Electrical Characteristics of Solution Processed Silicon Zinc Tin Oxide Thin Film Transistor

Lee¹,

Choi²

2015

Transactions on Electrical and Electronic Materials

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Effect of silicon doping into ZnSnO systems was investigated using solution process. Addition of silicon was used to suppress oxygen vacancy generation. The transfer characteristics of the device showed threshold voltage shift toward the positive direction with increasing Si content due to the high binding energy of silicon atoms with oxygen. As a result, the carrier concentration was decreased with increasing Si content.

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High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel

Cited by 376 publications

References 10 publications

An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

Conductivity in transparent oxide semiconductors

The Influence of Silicon Doping on Electrical Characteristics of Solution Processed Silicon Zinc Tin Oxide Thin Film Transistor

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