High-Performance Thin Film Transistor with Amorphous In₂O₃–SnO₂–ZnO Channel Layer

Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

“…Thin film transistors based on amorphous oxide films (OxTFTs) have attracted tremendous interest as TFT backplanes in active-matrix organic light emitting diodes (OLEDs) and liquid crystal displays owing to their high mobilities. [1][2][3][4][5][6][7] Intensive developments on oxide compounds including InO x -based, [8][9][10][11][12][13] ZnO x -based, 14 SnO x -based 15 and mixed channel materials such as InZnO x -based OxTFTs [16][17][18][19][20][21][22][23][24][25] have been widely studied in OxTFTs in recent decades because of their excellent electrical stabilities and high mobilities. Among them, InGaZnO (IGZO) 1,2,26 and InSnZnO (ITZO) 18,19 are currently being developed for use as commercial TFT backplanes because of their superior properties and high electron mobilities.…”

Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect

“…On the other hand, Tomai et al reported that a-InSnZnO (ITZO) replacing gallium with tin in IGZO has excellent properties, such as high mobility. 3 Furthermore, it has been reported that the ITZO TFT shows high reliability under the normal stress condition. 4,5 To realize the OLED and SoP devices, reliability under electrical stress in TAOS TFTs is one of the most important issues to be resolved.…”

“…3 Hence, in the early period of bias stress, electron trapping into the gate insulator occurs conspicuously followed by hole trapping into the passivation layer. Therefore, it seems that the V th shift to the positive direction and the drain current decrease were mainly induced by electron trapping.…”

InZnSnO-Based Electronic Devices for Flat Panel Display Applications

“…5,6 Besides, the high wet etching rate of a-IGZO, during the formation process of Mo or Al source (S)/drain (D) electrodes in PAN solution, causes the difficulty for fabricating a-IGZO TFTs with back-channel-etch (BCE) structure which is cheaper and simpler process than the etching stop one. [7][8][9] The technology of memory device embedded in a display pixel can reduce power consumption and provide various functions for system driving circuits. The most popular nonvolatile memory, flash memory, has been widely used in many electronic products such as universal serial bus (USB), program-able logic circuit and radio-frequency identification (RFID).…”

“…With Tin oxide in the a-IZTO thin film, the etch resistance of a-IZTO layer against chemical etchants, for the S/D electrode formation also can be enhanced and lead to a better etch selectivity to S/D electrodes. 9 The a-IZTO TFT resultantly has the potential to be integrated with a-IZTO RRAM as one of periphery circuits for SoP applications.…”