High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature

Yao, Rihui; Li, Xiaoqing; Zheng, Zeke; Zhang, Xiaochen; Xiong, Mei; Xiao, Song; Ning, Honglong; Wu, Yuxiang; Peng, Junbiao

doi:10.3390/ma11101871

Cited by 5 publications

(6 citation statements)

References 21 publications

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“…The XPS wide‐ranging scan core level spectra of In3d5, Zn2p3, Sn3d5, and O1s peaks in both unpurified and purified IZTO are shown in Figure S5a–d in the Supporting Information. XPS core level spectra of In3d5, Zn2p3, Sn3d5, and O1s peaks are obtained from the surface of the unpurified and purified a‐IZTO film . The increase of peak intensity for In3d5, Sn3d5, and Zn2p3, and a decrease of O 1s can be seen for the purified film.…”

Section: Resultsmentioning

confidence: 99%

“…The increase of peak intensity for In3d5, Sn3d5, and Zn2p3, and a decrease of O 1s can be seen for the purified film. The increase of peak intensity for In3d5, Sn3d5, and Zn2p3 and decrease of O 1s peak intensity in purified a‐IZTO suggests that the reduction of V o concentration (higher binding energy peak related to V o ) leads to higher the M–O–M bond concentration …”

Section: Resultsmentioning

confidence: 99%

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High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor

Bukke

Mude

Saha

et al. 2019

Adv Materials Inter

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been widely used as the active semiconductor materials for the oxide TFTs. For example, amorphous indium-zinc-tin oxide (a-IZTO) as an active layer on high-k dielectric material such as aluminum oxide (AlO x ), [42][43][44] zirconium oxide (ZrO x ), [45][46][47][48] hafnium oxide (HfO x ), [49] zirconium-doped aluminum oxide (ZAO), [50] and lanthanum doped zirconium oxide (LaZrO x ) [51] have been used for solution process. The purpose of using a high-κ gate insulator is for the low voltage driven oxide TFTs.The oxide TFT could be annealed at a higher temperature (>500 °C) [52] to improve its performance and stability, but higher annealing temperature prevents the use of the plastic substrate for the flexible display. [53] Also, various process technologies are developed to improve the film quality, for example, Ar/O 2 plasma treatment, [54] O 2 annealing, [55] and UV ozone treatment. [56] Many of the previous reports have focused on the thin-film quality and lowering fabrication process temperature by using the UV treatment [57] or combustion method. [58] Moreover, to address present-day microelectronics challenges, the synthesis of high-quality semiconductor precursor solution is essential for high performance, oxide TFTs at low processing temperatures.In this study, we report the impact of metal oxide precursor purification on the performance of TFTs. Smooth surface morphology and the high-quality interface between a-IZTO and ZrO x are confirmed by atomic force microscopy (AFM) and X-ray photoelectron spectroscopic (XPS) analysis, respectively. The mobility, ON/OFF current ratio, gate voltage swing (SS), and hysteresis of the purified a-IZTO TFTs are significantly improved compared to the TFTs using unpurified precursor solutions. The hysteresis and positive bias-stress stability of the transfer curve for the purified a-IZTO TFTs are improved as a result of the reduced interface charge trapping. Therefore, the purification of the oxide semiconductor is an essential step for high performance, solution processed oxide TFTs.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor

Bukke

Mude

Saha

et al. 2019

Adv Materials Inter

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“…Laser treatment could lead to the decrease of oxygen binding energy of the cation in the a‐STO film, and the oxygen atoms in the metal‐oxygen bonds (M‐O) are decoupled to form oxygen vacancies. The increase of oxygen vacancies leading to a reduction in the coordination number of atomic atoms in the a‐STO films, and the shift of the peak position of the curve to low binding energy …”

Section: Results and Analysismentioning

confidence: 99%

“…The increase of oxygen vacancies leading to a reduction in the coordination number of atomic atoms in the a-STO films, and the shift of the peak position of the curve to low binding energy. 19,20 Figure 6 shows the XPS peak distribution curve of the a-STO thin films O1s after laser treatment. The intrinsic oxygen (V M-O ) is shown at the low binding energy peak (530.69-531.42eV).…”

Section: Chemical Structure Analysis Of A-sto Films With Laser Treamentioning

confidence: 99%

Effect of deep UV laser treatment on silicon‐doped Tin oxide thin film

et al. 2019

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In this paper, the effect of deep ultraviolet (UV) laser on physical and electrical properties of amorphous Silicon-doped tin oxide (amorphous Si-Sn-O, a-STO) thin films were studied. Surface morphology, thickness, crystallinity, and optical band gap of a-STO thin films treated by laser were investigated. Results showed that the decrease of thickness and surface roughness of a-STO thin films after deep UV laser treatment, and the films maintained an amorphous structure, which implied that the quality of a-STO thin films were improved.The peak position of oxygen vacancy binding energy became lower; this is caused by an increase in oxygen vacancies resulting in a decrease in coordination number. And the oxygen vacancy content of the a-STO thin films was increased after deep UV laser treatment. In addition, the optical band gap of a-STO films was broaden after the deep UV laser treatment. It exploits a new application of deep UV laser in oxide semiconductor.KEYWORDS amorphous STO thin film, deep ultraviolet laser, optical band gap, oxygen vacancy

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“…[25] Here, we designed a room-temperature preparation process for Nd: AIZO/Al 2 O 3 dual-layer TFT devices. Our previous work has proven that the ultrathin Al 2 O 3 layer below 3 nm can improve the I on and μ sat of AZO and IGZO TFTs, [26][27][28][29] which is attributed to the reduced probability of carrier trapping by defects on the back-channel surface. [30,31] Ultrathin Al 2 O 3 layers can also reduce I off and improve the electrical stability of TFTs.…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Nd: AIZO/Al₂O₃ Dual Active Layer Design Without Thermal Annealing: High‐Speed Electron Transport and Defect Modification in Thin Film Transistors

Fu,

Liang,

et al. 2024

Adv Eng Mater

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Flexible wearable electronics have been developing rapidly in recent years, and one of its core devices, thin‐film transistor (TFT), is also attracting attention. Current TFT preparation processes usually require high annealing temperatures (>350 °C), which is not conducive to their application on most flexible substrates (PET, PEN, nanopaper, etc.). In this article, a strategy for the room temperature preparation of Nd:AIZO/Al2O3 dual‐layer TFT devices is proposed, which has appreciable electrical properties without additional annealing treatment. Taguchi orthogonal experimental methods are used to investigate the effects of three essential process parameters on the performance of the films and devices. As Nd:AIZO deposition time decreases and Al2O3 oxygen percentage and time during deposition increase, the μsat and SS of TFT devices are improved. With the preferred combination of parameters applied to the device preparation, the device exhibits a saturation mobility μsat of 24.3 cm2 V−1 s−1, a threshold voltage Vth of −1.4 V, a subthreshold swing SS of 0.21 V decade−1 and an Ion/Ioff ratio of 4.26 × 108. The ultra‐thin Al2O3 layer act as defect modification and form high‐speed electron transport in channel layer. The room temperature preparation of the dual‐layer TFT process proposed in this article is compatible with large‐size low‐cost flexible substrates. It has great potential for application in green flexible wearable electronics.

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High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature

Cited by 5 publications

References 21 publications

High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor

High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor

Effect of deep UV laser treatment on silicon‐doped Tin oxide thin film

High‐Performance Nd: AIZO/Al₂O₃ Dual Active Layer Design Without Thermal Annealing: High‐Speed Electron Transport and Defect Modification in Thin Film Transistors

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High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature

Cited by 5 publications

References 21 publications

High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor

High Performance of a‐IZTO TFT by Purification of the Semiconductor Oxide Precursor

Effect of deep UV laser treatment on silicon‐doped Tin oxide thin film

High‐Performance Nd: AIZO/Al2O3 Dual Active Layer Design Without Thermal Annealing: High‐Speed Electron Transport and Defect Modification in Thin Film Transistors

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High‐Performance Nd: AIZO/Al₂O₃ Dual Active Layer Design Without Thermal Annealing: High‐Speed Electron Transport and Defect Modification in Thin Film Transistors