Effect of deep UV laser treatment on silicon‐doped Tin oxide thin film

Abstract

In this paper, the effect of deep ultraviolet (UV) laser on physical and electrical properties of amorphous Silicon-doped tin oxide (amorphous Si-Sn-O, a-STO) thin films were studied. Surface morphology, thickness, crystallinity, and optical band gap of a-STO thin films treated by laser were investigated. Results showed that the decrease of thickness and surface roughness of a-STO thin films after deep UV laser treatment, and the films maintained an amorphous structure, which implied that the quality of a-STO thin films were improved.The peak position of oxygen vacancy binding energy became lower; this is caused by an increase in oxygen vacancies resulting in a decrease in coordination number. And the oxygen vacancy content of the a-STO thin films was increased after deep UV laser treatment. In addition, the optical band gap of a-STO films was broaden after the deep UV laser treatment. It exploits a new application of deep UV laser in oxide semiconductor.KEYWORDS amorphous STO thin film, deep ultraviolet laser, optical band gap, oxygen vacancy

Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method

“…Laser treatment is a top-down treatment technology and the treatment position can be accurately controlled, so the treatment area can be limited to a specific range of in-plane and thickness direction, and the thin films and nanostructures can be selectively treated to improve the properties of thin films and MOS-TFT without affecting the substrate and adjacent materials [43,[45][46][47]. Common laser treatment equipment is shown in Figure 3 [48]. As a new treatment technology in the field of flexible, printing and wearable devices, laser treatment effectively avoids the shortcomings of other treatment methods, such as high energy consumption, long processing time, high process temperature, incompatibility with flexible substrate, only the whole device being treatable without the active layer being treated accurately.…”

“…Laser treatment is a top-down treatment technology and the treatment position can be accurately controlled, so the treatment area can be limited to a specific range of inplane and thickness direction, and the thin films and nanostructures can be selectively treated to improve the properties of thin films and MOS-TFT without affecting the substrate and adjacent materials [43,[45][46][47]. Common laser treatment equipment is shown in Figure 3 [48]. Laser treatment technology has many advantages and has made remarkable achievements in the application of active layer thin films and MOS-TFT devices prepared by solution method.…”