High‐Performance Nd: AIZO/Al2O3 Dual Active Layer Design Without Thermal Annealing: High‐Speed Electron Transport and Defect Modification in Thin Film Transistors
Yubin Fu,
Zhihao Liang,
Xiao Fu
et al.
Abstract:Flexible wearable electronics have been developing rapidly in recent years, and one of its core devices, thin‐film transistor (TFT), is also attracting attention. Current TFT preparation processes usually require high annealing temperatures (>350 °C), which is not conducive to their application on most flexible substrates (PET, PEN, nanopaper, etc.). In this article, a strategy for the room temperature preparation of Nd:AIZO/Al2O3 dual‐layer TFT devices is proposed, which has appreciable electrical properti… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.